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The MDmeshTM DM6 MOSFETs are ST’s latest fast recovery diode series optimized for full-bridge phase-shifted ZVS topologies. These 600 – 650 V MOSFETs feature a very low recovery charge and time (Qrr, trr) and show up to 15% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (50 V/ns) allows reliable performance even when exposed to large voltage transients such as noise and harmonics on AC power lines.

Key features and benefits:

  • Improved intrinsic diode reverse recovery time (Trr) for increase efficiency
  • Higher dV/dt capability for improved system reliability
  • AEC-Q101-qualified 600 V and 650 V MOSFETs

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