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Combining low gate charge (Qg) and optimized capacitance profile, the MDmesh™ M6 power MOSFET series is today's reference for resonant topologies. This new super-junction MDmesh™ M6 series opens the door to power converter designers for new scenarios targeting high efficiency and power density.
With a breakdown voltage ranging from 600 to 700 V, MDmesh™ M6 power MOSFETs are available in a wide range of package options including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. Power MOSFETs are belonging to the STPOWER™ family.

Key features and benefits:

  • Optimized threshold voltage for soft switching
  • Good switching behavior for hard and soft switching
  • Low gate charge for operation at high frequencies
  • Capacitance profiles and threshold voltage optimized to target high efficiency on new topologies in power conversion applications
  • Extremely high efficiency performance to increase power density
  • Wide product portfolio

Our portfolio includes a wide range of operating voltages for Industrial applications such as chargers, adapters, silver box modules, LED lighting, telecom, server and solar.
Our wide STPOWER™ product portfolio combined with state-of-the art packaging and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.


New 600 V MDmesh™ M6 power MOSFETs in TO-LL package

The MDmesh™ M6 series of super-junction MOSFETs has been extended with the introduction of STO33N60M6 (105 mΩ typ., 25 A) and STO36N60M6 (85 mΩ typ., 30 A) n-channel power MOSFETS in in a new space-saving, thermally efficient TO-Leadless (TO-LL) package.
This new high-voltage, leadless power-package outline has a 30% smaller footprint and 50% lower height than the standard 7-pin D²PAK package, allowing more compact and space-efficient power converters. With low parasitic inductances, the TO-LL package also helps minimize electromagnetic interference.