意法半导体的功率MOSFET产品采用先进的封装,具有很宽的击穿电压范围(-100到1700 V)、低栅极电荷和低导通电阻。意法半导体面向高压功率MOSFET(MDmesh™)和低压功率MOSFET(STripFET)的制程确保增强了功率处理能力,从而实现了高效解决方案。功率MOSFET属于STPOWER系列。



了解我们的STripFET低压功率MOSFET — 采用先进的封装,具有低栅极电荷和低导通电阻。

> 30V-350V N-通道MOSFET

了解我们的中等电压STripFET N-沟道功率MOSFET 产品组,提供多种小型和大功率封装选项。

> 350V-700V超结MOSFET

了解我们的MDmesh™ N-沟道超结MOSFET,采用标准和快速恢复二极管。

> 700V-1700V高压和超高压MOSFET



了解我们的STripFET P-沟道MOSFET,采用超小型封装,最近又添加了新型沟槽栅器件。


我们各种STPOWER MOSFET产品的主要特性包括:

  • 击穿电压范围:–100至1700 V
  • 提供30多种封装选项,包括带有专用控制引脚、能够提高开关效率的4引线TO-247封装、用于大电流性能的H2PAK、极具创新意义的表贴封装无引线TO-LL、1-mm高表贴封装PowerFLAT系列、从2×2mm到8×8mm的中压高压特高压功率MOSFET。这些表贴封装带有大片裸露金属作为漏垫,使其具有优异的散热能力。
  • 改善了栅极电荷,降低了通态电阻,满足了当今极具挑战性的效率要求
  • 面向所选产品线的本征快速体二极管
  • 广泛的汽车级功率MOSFET产品组合
  • 面向应用的技术



Automotive MOSFETs in tiny 5x6 mm dual-side cooling package

ST has extended its offering of AEC-Q101 MOSFETs with the introduction of two 40 V devices in the advanced PowerFLAT™ 5x6 dual-side cooling (DSC) package with wettable flanks. The STLD200N4F6AG and STLD125N4F6AG, with a maximum on-resistance of 1.5 mΩ and 3.0 mΩ respectively, ensure high efficiency and help simplify system thermal management. The 0.8 mm-high PowerFLAT 5x6 DSC retains the footprint and thermally efficient bottom-side design of the standard wettable flank package, while it exposes the top-side source electrode to further enhance heat dissipation. This allows a higher current rating that increases power density, enabling designers to build smaller ECUs without trading off functionality, performance, or reliability.

Power MOSFET Basics

mosfet circuit
MOSFET circuit symbol

MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. It's a voltage controlled device with 3 terminals:

  • Gate (electrically insulated from the semiconductor)
  • Drain
  • Source

When a voltage applied between the Gate and the Source reaches a certain threshold (VGS(th) or threshold G-S voltage), the device is able to support current conduction between the Drain and the Source (ID or drain current).

mosfet structure
MOSFET simplified structure

When a voltage applied between the Gate and the Source is below VGS(th), the device will withstand a voltage up to BVDSS (or breakdown voltage).

MOSFETs can be used as a signal amplifier (linear operation) or as a switch in power applications.

MOSFET parameters

Like many other types of semiconductor power switches, the main parameters of a MOSFET, usually available in most datasheets, are:

  • RDS(on) (on-state resistance): electrical resistance when the device is set in on state. The lower is RDS(on), the lower is the conduction loss due to power dissipation when the current is flowing.
  • BVDSS (breakdown voltage): maximum drain-to-source voltage that the device is able to sustain when in off state.
  • QG (total gate charge): amount of electric charge required to the gate driver to turn on/off the device itself. QG impacts directly the efficiency (the lower, the better).

The product of RDS(on) and QG is known as the MOSFET Figure of Merit (FOM).

Other important parameters are intrinsic capacitances that can affect the switching times and voltage spikes, and body drain diode when device is used as power diode, like in synchronous free-wheeling operation mode.

mosfet parameters
Example of MOSFET datasheet parameters

Learn more about how to read MOSFET datasheet parameters thanks to our series of videos dedicated to "Power MOSFET datasheet parameters".

Main types of power MOSFETs

MOSFETs can be of different types, including:

N-channel enhancement-mode MOSFETs are the most popular type used in power switching circuits because of their low RDS(on) (on-state resistance) compared to P-channel MOSFETs.

mosfet main types
Overview of the main types of MOSFETs

Power MOSFET Applications

Power MOSFETs play an important role in all applications handling Power.

The main applications of high voltage MOSFETs include:

  • Switch Mode Power Supplies (SMPS)
  • Residential, commercial, architectural and street lighting
  • DC-DC converters
  • Motor control
  • Automotive applications

ST's high voltage MOSFET portfolio offers a broad range of breakdown voltages up to 1700 V, with low gate charge and low on-resistance, combined with state-of-the-art packaging. ST's MDmesh™ high-voltage MOSFETs technology has enhanced power-handling capability, resulting in high-efficiency solutions.

The main applications of low voltage MOSFETs include:

  • Switch, buck and synchronous rectification
  • Uninterruptible Power Supplies (UPS)
  • Small motor control
  • Switch Mode Power Supplies (SMPS)
  • Power-Over-Ethernet (PoE)
  • Solar inverters
  • Automotive applications

ST's low voltage MOSFET portfolio offers a broad range of breakdown voltages from -100 V to 120 V, with low gate charge and low on-resistance, combined with state-of-the art packaging.