产品概述
描述
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.-
所有功能
- AEC-Q101 rev. C qualified
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (TJ = 200 °C)
精选 视频
SiC can be applied to all types of energy handling
全部资源
| Resource title | 版本 | Latest update |
|---|
产品规格 (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 5.0 | 25 Jun 2021 | 25 Jun 2021 |
应用手册 (3)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 1.0 | 06 Jul 2021 | 06 Jul 2021 | ||
| 1.0 | 15 Jul 2019 | 15 Jul 2019 | ||
| 1.4 | 13 Sep 2018 | 13 Sep 2018 |
技术文档 (2)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 2.2 | 06 Jul 2021 | 06 Jul 2021 | ||
| 1.0 | 22 Sep 2020 | 22 Sep 2020 |
用户手册 (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 1.3 | 21 Oct 2016 | 21 Oct 2016 |
宣传册 (5 of 6)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 1.0 | 28 Jul 2021 | 28 Jul 2021 | ||
| 1.0 | 08 May 2020 | 08 May 2020 | ||
| 1.0 | 01 Feb 2021 | 01 Feb 2021 | ||
| 1.0 | 14 Oct 2020 | 14 Oct 2020 | ||
| 1.0 | 15 May 2020 | 15 May 2020 | ||
| 3.0 | 25 May 2021 | 25 May 2021 |
手册 (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 1.1 | 03 Jun 2021 | 03 Jun 2021 |
会议文章 (5 of 8)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
| 1.0 | 29 Apr 2021 | 29 Apr 2021 | ||
| 1.0 | 23 Mar 2020 | 23 Mar 2020 | ||
| 1.0 | 25 Jul 2018 | 25 Jul 2018 | ||
| 1.0 | 25 Jul 2018 | 25 Jul 2018 | ||
| 1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
| 1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
| 1.0 | 23 Mar 2020 | 23 Mar 2020 |
EDA符号、封装和3D模型
STMicroelectronics - SCT1000N170AG
为您的应用下载所有EDA符号、封装和3D模型，加快您的设计速度。您可以从大量CAD格式中进行选择，以匹配您的设计工具链。
符号
封装
3D模型
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| SCT1000N170AG | 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tube | HIP247 | - | - | CHINA | |||
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty
