搜索
取消
搜索历史
收藏

Please log in  to show your saved searches.

SCT10N120

批量生产
储存到myST

碳化硅功率MOSFET，1200 V、12 A、520 mOhm（典型值，TJ = 150 C），HiP247封装

下载数据手册
Order Direct
概述
Online design
样片和购买
解决方案
文件
CAD资源
工具与软件
质量与可靠性
Partner products
Sales Briefcase

产品概述

描述

该碳化硅功率MOSFET晶体管是利用宽禁带半导体材料的先进和创新特性生产出来的。因此，器件具有每区域无可比拟的导通状态电阻，以及卓越的开关性能，随温度变化极小。碳化硅（SiC）材料具有出色的热性能，与独有的HiP247™封装的器件外壳相结合，使设计人员能够采用符合行业标准的设计，显著提高器件的散热能力。这些特性使器件非常适用于高效率和高功率密度应用。

  • 所有功能

    • 导通电阻随温度变化敏感温度
    • 适应非常高的工作温度 (TJ = 200 °C)
    • 稳定的超快速本体二极管
    • 低电容
    阅读更多 阅读较少信息

特别推荐

相关应用

工业

全部资源

展开所有类别
Resource title
版本
Latest update

产品规格 (1)

Resource title
版本
Latest update
DS10954 Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package
3.0 28 Mar 2018
28 Mar 2018
DS10954 Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package 3.0

应用手册 (3)

Resource title
版本
Latest update
AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗
1.0 06 Jul 2021
06 Jul 2021
AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗 1.0
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp
1.0 15 Jul 2019
15 Jul 2019
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
AN3152 The right technology for solar converters
1.4 13 Sep 2018
13 Sep 2018
AN3152 The right technology for solar converters 1.4

技术文档 (2)

Resource title
版本
Latest update
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
2.2 06 Jul 2021
06 Jul 2021
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
TN1340 Recommendation for die sintering with Ag finishing
1.0 22 Sep 2020
22 Sep 2020
TN1340 Recommendation for die sintering with Ag finishing 1.0

用户手册 (1)

Resource title
版本
Latest update
UM1575 Spice model tutorial for Power MOSFETs
1.3 21 Oct 2016
21 Oct 2016
UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (5 of 6)

Resource title
版本
Latest update
Bridgeless Totem Pole PFC with SCR Inrush Current Limiter
1.0 28 Jul 2021
28 Jul 2021
Bridgeless Totem Pole PFC with SCR Inrush Current Limiter 1.0
ST MOSFET Finder, the new app for Android and iOS
1.0 08 May 2020
08 May 2020
ST MOSFET Finder, the new app for Android and iOS 1.0
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching
1.0 01 Feb 2021
01 Feb 2021
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
STPOWER TRANSISTORS 7/10 years longevity commitment program
1.0 14 Oct 2020
14 Oct 2020
STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
SiC MOSFET, the real breakthrough in high-voltage switching
1.0 15 May 2020
15 May 2020
SiC MOSFET, the real breakthrough in high-voltage switching 1.0
SiC MOSFETs: The real breakthrough in high-voltage switching
3.0 25 May 2021
25 May 2021
SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
Load more

手册 (1)

Resource title
版本
Latest update
Electric vehicle (EV) ecosystem
1.1 03 Jun 2021
03 Jun 2021
Electric vehicle (EV) ecosystem 1.1

会议文章 (5 of 8)

Resource title
版本
Latest update
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices
1.0 23 Jul 2018
23 Jul 2018
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis
1.0 29 Apr 2021
29 Apr 2021
Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis 1.0
Cost benefits of a SiC MOSFET-based high frequency converter
1.0 23 Mar 2020
23 Mar 2020
Cost benefits of a SiC MOSFET-based high frequency converter 1.0
Design rules for paralleling of Silicon Carbide Power MOSFETs
1.0 25 Jul 2018
25 Jul 2018
Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
SiC and Silicon MOSFET solution for high frequency DC-AC converters
1.0 25 Jul 2018
25 Jul 2018
SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films
1.0 23 Jul 2018
23 Jul 2018
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate
1.0 23 Jul 2018
23 Jul 2018
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
Wide bandgap materials: revolution in automotive power electronics
1.0 23 Mar 2020
23 Mar 2020
Wide bandgap materials: revolution in automotive power electronics 1.0
Load more

EDA符号、封装和3D模型

STMicroelectronics - SCT10N120

为您的应用下载所有EDA符号、封装和3D模型，加快您的设计速度。您可以从大量CAD格式中进行选择，以匹配您的设计工具链。

Symbols

符号

Footprints

封装

3D model

3D模型

全部资源

展开所有类别
Resource title
版本
Latest update

SPICE models (1)

Resource title
版本
Latest update
SCT10N120 PSpice model
1.0 27 Mar 2017
27 Mar 2017
SCT10N120 PSpice model 1.0

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
SCT10N120
批量生产
HIP247 工业 Ecopack2

SCT10N120

Package:

HIP247

Material Declaration**:

PDF XML
More Info

Marketing Status

批量生产

Package

HIP247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度（ºC） Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
SCT10N120 Available at 2 distributors

经销商的可用性SCT10N120

代理商名称
地区 库存 最小订购量 第三方链接
RS COMPONENTS EUROPE 12 1 马上订购
Farnell Element14 EUROPE 5 1 马上订购

代理商库存报告日期: 2021-07-31

代理商名称

RS COMPONENTS

库存

12

Min.Order

1

地区

EUROPE 马上订购

Farnell Element14

库存

5

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2021-07-31

Buy Direct
批量生产
EAR99 NEC Tube HIP247 - - CHINA 5.4 / 100

SCT10N120

供货状态

批量生产

ECCN (US)

EAR99
更多信息

Budgetary Price (US$)*/Qty

5.4 / 100

经销商的可用性SCT10N120

代理商名称
地区 库存 最小订购量 第三方链接
RS COMPONENTS EUROPE 12 1 马上订购
Farnell Element14 EUROPE 5 1 马上订购

代理商库存报告日期: 2021-07-31

代理商名称

RS COMPONENTS

库存

12

Min.Order

1

地区

EUROPE 马上订购

Farnell Element14

库存

5

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2021-07-31

ECCN (EU)

NEC

包装类型

Tube

封装

HIP247

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

5.4 / 100

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

  • 订阅电子报

关注我们

保留所有权利 © 2020 STMicroelectronics
使用条款 | 销售条款和条件 | 商标 | 查看隐私策略 | Cookies管理
京ICP备14016349号-2

您知道吗？

Please provide email

Please enter code

Congratulations!

Simple subscription

Congratulations!

x

您可以开始跟踪此产品，以便在新的资源、工具和软件可用时接收更新。操作很简单，只需要1分钟。

您可以开始跟踪此产品，以便在新的资源、工具和软件可用时接收更新。操作很简单，只需要1分钟。

您可以开始跟踪此产品，以便在新的资源、工具和软件可用时接收更新。操作很简单，只需要1分钟。

Invalid code, please check the code sent to your email address and validate again. In case you did not receive any code please select 'I did not receive code'

您可以开始跟踪此产品，以便在新的资源、工具和软件可用时接收更新。操作很简单，只需要1分钟。

ST (as data controller according to the Privacy Policy) will keep a record of my navigation history and use that information as well as the personal data that I have communicated to ST for marketing purposes relevant to my interests. My personal data will be provided to ST affiliates and distributors of ST in countries located in the European Union and outside of the European Union for the same marketing purposes 

---------
I understand that I can withdraw my consent at any time through opt-out links embedded in communication I receive or by managing my account settings. I can also exercise other user’s rights at any time as described in the Privacy Policy.

ST will retain your browsing history and use details of the products and services that you have previously accessed, purchased or downloaded to make suggestions to you for other products and services which ST believe you will also be interested in.
ST uses the personal data that you provide directly to it and through your activity on ST websites in accordance with the Privacy Policy, to send you (directly or via ST local affiliates or distributors) newsletters, advertisements or other specific and targeted marketing material about ST products and services. Your personal data will be provided to ST local affiliates and distributors in countries located in the European Union and outside of the European Union. You can consult the list of ST local affiliates and distributors in our website’s Privacy Policy. To send you specific and targeted marketing material, the information that you provide directly to ST and/or through your activity on ST websites may also be combined with other information that ST obtains from you in another context (e.g. if you enter into a business relationship with ST, its local affiliates or distributors).

现在，您订阅了
- SCT10N120

You can re-use the validation code to subscribe to another product or application.

Sorry, there was a problem on our servers. Please try again.