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SCT10N120

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Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

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该碳化硅功率MOSFET晶体管是利用宽禁带半导体材料的先进和创新特性生产出来的。因此，器件具有每区域无可比拟的导通状态电阻，以及卓越的开关性能，随温度变化极小。碳化硅（SiC）材料具有出色的热性能，与独有的HiP247™封装的器件外壳相结合，使设计人员能够采用符合行业标准的设计，显著提高器件的散热能力。这些特性使器件非常适用于高效率和高功率密度应用。

主要特性
- 导通电阻随温度变化敏感温度
- 适应非常高的工作温度 (T_J = 200 °C)
- 稳定的超快速本体二极管
- 低电容
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SCT10N120

HIP247

Tube

1000

EAR99

CHINA

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Distributor availability ofSCT10N120

代理商名称	地区	库存	最小订购量	Third party link
DIGIKEY	WORLDWIDE	138	1	Order Now
ARROW	AMERICA	3253	600	Order Now
MOUSER	WORLDWIDE	324	1	Order Now
Farnell Element14	EUROPE	570	1	Order Now

代理商库存报告日期: 2019-09-18

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DIGIKEY

库存

138

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WORLDWIDE Order Now

ARROW

库存

3253

Min.Order

600

地区

AMERICA Order Now

MOUSER

库存

324

Min.Order

地区

WORLDWIDE Order Now

Farnell Element14

库存

570

Min.Order

地区

EUROPE Order Now

代理商库存报告日期: 2019-09-18

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SCT10N120

封装

HIP247

包装类型

Tube

More Info

Unit Price (US$)

8.0*

Distributor availability ofSCT10N120

代理商名称	地区	库存	最小订购量	Third party link
DIGIKEY	WORLDWIDE	138	1	Order Now
ARROW	AMERICA	3253	600	Order Now
MOUSER	WORLDWIDE	324	1	Order Now
Farnell Element14	EUROPE	570	1	Order Now

代理商库存报告日期: 2019-09-18

代理商名称

DIGIKEY

库存

138

Min.Order

地区

WORLDWIDE Order Now

ARROW

库存

3253

Min.Order

600

地区

AMERICA Order Now

MOUSER

库存

324

Min.Order

地区

WORLDWIDE Order Now

Farnell Element14

库存

570

Min.Order

地区

EUROPE Order Now

代理商库存报告日期: 2019-09-18

供货状态

Active

Unit Price (US$)

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors

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	描述	版本	文档大小	操作
	DS10954 Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package	3.0	232.26 KB	PDF

DS10954

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package

PDF

应用手册

描述	版本	文档大小	操作
AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗	1.0	608.21 KB	PDF
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp	1.0	6.39 MB	PDF
AN3152 The right technology for solar converters	1.4	416.3 KB	PDF

AN4671

如何调整碳化硅 MOSFET 驱动减少功率损耗

PDF

AN5355

Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

PDF

AN3152

The right technology for solar converters

PDF

技术文档

	描述	版本	文档大小	操作
	TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs	2.2	2.34 MB	PDF

TA0349

Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

PDF

用户手册

	描述	版本	文档大小	操作
	UM1575 Spice model tutorial for Power MOSFETs	1.3	1.51 MB	PDF

UM1575

Spice model tutorial for Power MOSFETs

PDF

硬件型号、CAD库及SVD

	描述	版本	文档大小	操作
	SCT10N120 PSpice model	1.0	5.29 KB	ZIP

SCT10N120 PSpice model

ZIP

出版刊物和宣传资料

宣传册

	描述	版本	文档大小	操作
	SiC MOSFET: The real breakthrough in high-voltage switching	1.0	401.67 KB	PDF
	SiC MOSFETs: The real breakthrough in high-voltage switching	3.0	1.52 MB	PDF

SiC MOSFET: The real breakthrough in high-voltage switching

PDF

SiC MOSFETs: The real breakthrough in high-voltage switching

PDF

手册

	描述	版本	文档大小	操作
	Electric vehicle (EV) ecosystem	1.1	1.28 MB	PDF

Electric vehicle (EV) ecosystem

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会议文章

描述	版本	文档大小	操作
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices	1.0	760.82 KB	PDF
Cost benefits of a SiC MOSFET-based high frequency converter	1.0	1.8 MB	PDF
Design rules for paralleling of Silicon Carbide Power MOSFETs	1.0	582.21 KB	PDF
SiC and Silicon MOSFET solution for high frequency DC-AC converters	1.0	1.06 MB	PDF
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films	1.0	980.73 KB	PDF
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate	1.0	1.35 MB	PDF
Wide bandgap materials: revolution in automotive power electronics	1.0	792.49 KB	PDF

3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

PDF

Cost benefits of a SiC MOSFET-based high frequency converter

PDF

Design rules for paralleling of Silicon Carbide Power MOSFETs

PDF

SiC and Silicon MOSFET solution for high frequency DC-AC converters

PDF

Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

PDF

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

PDF

Wide bandgap materials: revolution in automotive power electronics

PDF

产品型号	供货状态	封装	等级规格	符合RoHS级别	材料声明**
SCT10N120	Active	HIP247	工业	Ecopack2

SCT10N120

Package:

HIP247

Material Declaration**:

More Info

Marketing Status

Package

HIP247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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