-
该碳化硅功率MOSFET晶体管是利用宽禁带半导体材料的先进和创新特性生产出来的。因此，器件具有每区域无可比拟的导通状态电阻，以及卓越的开关性能，随温度变化极小。碳化硅（SiC）材料具有出色的热性能，与独有的HiP247™封装的器件外壳相结合，使设计人员能够采用符合行业标准的设计，显著提高器件的散热能力。这些特性使器件非常适用于高效率和高功率密度应用。
主要特性
- 导通电阻随温度变化敏感温度
- 适应非常高的工作温度 (TJ = 200 °C)
- 稳定的超快速本体二极管
- 低电容
样片和购买
| 型号 | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| SCT10N120 | HIP247 | Tube |
Active
|
8 | 1000 | EAR99 | CHINA | Check Availability | Get sample |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
精选 视频
| 型号 | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| SCT10N120 |
Active
|
HIP247 | 工业 | Ecopack2 |
|
SCT10N120
Package:
HIP247Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
