SCT10N120

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package

如何调整碳化硅 MOSFET 驱动减少功率损耗

Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

The right technology for solar converters

Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

Spice model tutorial for Power MOSFETs

SCT10N120 PSpice model

SiC MOSFET: The real breakthrough in high-voltage switching

SiC MOSFETs: The real breakthrough in high-voltage switching

Electric vehicle (EV) ecosystem

3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

Cost benefits of a SiC MOSFET-based high frequency converter

Design rules for paralleling of Silicon Carbide Power MOSFETs

SiC and Silicon MOSFET solution for high frequency DC-AC converters

Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

Wide bandgap materials: revolution in automotive power electronics