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SCT10N120

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碳化硅功率MOSFET，1200 V、12 A、520 mOhm（典型值，TJ = 150 C），HiP247封装

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该碳化硅功率MOSFET晶体管是利用宽禁带半导体材料的先进和创新特性生产出来的。因此，器件具有每区域无可比拟的导通状态电阻，以及卓越的开关性能，随温度变化极小。碳化硅（SiC）材料具有出色的热性能，与独有的HiP247™封装的器件外壳相结合，使设计人员能够采用符合行业标准的设计，显著提高器件的散热能力。这些特性使器件非常适用于高效率和高功率密度应用。

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导通电阻随温度变化敏感温度

适应非常高的工作温度 (T_J = 200 °C)

稳定的超快速本体二极管

低电容
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Getting started with eDesignSuite

The smart way to design your application

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1200 V SiC MOSFETs

Industry's highest temperature rating of 200 °C

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	Resource title		Latest update

产品规格 (1)

	Resource title		Latest update
PDF	DS10954 Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package 3.0		28 Mar 2018	28 Mar 2018 DS10954 Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package 3.0

应用手册 (3)

	Resource title	Latest update
PDF	AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗 1.0	03 Apr 2020	03 Apr 2020 AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗 1.0
PDF	AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0	15 Jul 2019	15 Jul 2019 AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
PDF	AN3152 The right technology for solar converters 1.4	13 Sep 2018	13 Sep 2018 AN3152 The right technology for solar converters 1.4

技术文档 (2)

	Resource title		Latest update
PDF	TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2		03 Apr 2020	03 Apr 2020 TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
PDF	TN1340 Recommendation for die sintering with Ag finishing 1.0		22 Sep 2020	22 Sep 2020 TN1340 Recommendation for die sintering with Ag finishing 1.0

用户手册 (1)

	Resource title		Latest update
PDF	UM1575 Spice model tutorial for Power MOSFETs 1.3		21 Oct 2016	21 Oct 2016 UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (5)

	Resource title	Latest update
PDF	ST MOSFET Finder, the new app for Android and iOS 1.0	08 May 2020	08 May 2020 ST MOSFET Finder, the new app for Android and iOS 1.0
PDF	STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0	01 Feb 2021	01 Feb 2021 STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
PDF	STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0	14 Oct 2020	14 Oct 2020 STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
PDF	SiC MOSFET, the real breakthrough in high-voltage switching 1.0	15 May 2020	15 May 2020 SiC MOSFET, the real breakthrough in high-voltage switching 1.0
PDF	SiC MOSFETs: The real breakthrough in high-voltage switching 3.0	23 Mar 2020	23 Mar 2020 SiC MOSFETs: The real breakthrough in high-voltage switching 3.0

手册 (1)

	Resource title		Latest update
PDF	Electric vehicle (EV) ecosystem 1.1		23 Mar 2020	23 Mar 2020 Electric vehicle (EV) ecosystem 1.1

会议文章 (5 of 7)

	Resource title	Latest update
PDF	3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0	23 Jul 2018	23 Jul 2018 3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
PDF	Cost benefits of a SiC MOSFET-based high frequency converter 1.0	23 Mar 2020	23 Mar 2020 Cost benefits of a SiC MOSFET-based high frequency converter 1.0
PDF	Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0	25 Jul 2018	25 Jul 2018 Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
PDF	SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0	25 Jul 2018	25 Jul 2018 SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
PDF	Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0	23 Jul 2018	23 Jul 2018 Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
PDF	Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0	23 Jul 2018	23 Jul 2018 Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
PDF	Wide bandgap materials: revolution in automotive power electronics 1.0	23 Mar 2020	23 Mar 2020 Wide bandgap materials: revolution in automotive power electronics 1.0

EDA Symbols, Footprints and 3D Models

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	Resource title		Latest update

硬件型号、CAD库及SVD (1)

	Resource title		Latest update
ZIP	SCT10N120 PSpice model 1.0		27 Mar 2017	27 Mar 2017 SCT10N120 PSpice model 1.0

质量与可靠性

产品型号	Marketing Status	封装	等级规格	符合RoHS级别	材料声明**
SCT10N120	批量生产	HIP247	工业	Ecopack2	PDF XML

SCT10N120

Package:

HIP247

Material Declaration**:

PDF XML

More Info

Marketing Status

Package

HIP247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系销售支持。

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从ST订购

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ECCN (EU)

包装类型

封装

温度（ºC）

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Budgetary Price (US$)*/Qty

最小值

最大值

SCT10N120

Available at 2 distributors

经销商的可用性SCT10N120

代理商名称	地区	库存	最小订购量	第三方链接
RS COMPONENTS	EUROPE	84	1	马上订购
Farnell Element14	EUROPE	369	1	马上订购

代理商库存报告日期: 2021-02-23

代理商名称

RS COMPONENTS

库存

Min.Order

地区

EUROPE 马上订购

Farnell Element14

库存

369

Min.Order

地区

EUROPE 马上订购

代理商库存报告日期: 2021-02-23

EAR99

NEC

Tube

HIP247

CHINA

8.0 / 1k

SCT10N120

供货状态

批量生产

ECCN (US)

EAR99

更多信息

Budgetary Price (US$)*/Qty

8.0 / 1k

经销商的可用性SCT10N120

代理商名称	地区	库存	最小订购量	第三方链接
RS COMPONENTS	EUROPE	84	1	马上订购
Farnell Element14	EUROPE	369	1	马上订购

代理商库存报告日期: 2021-02-23

代理商名称

RS COMPONENTS

库存

Min.Order

地区

EUROPE 马上订购

Farnell Element14

库存

369

Min.Order

地区

EUROPE 马上订购

代理商库存报告日期: 2021-02-23

ECCN (EU)

NEC

包装类型

Tube

封装

HIP247

Operating Temperature (°C)

(最小值)

(最大值)

Budgetary Price (US$)* / Qty

8.0 / 1k

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

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SCT10N120

Product overview

描述

All features

精选 视频

特别推荐

All resources

产品规格 (1)

应用手册 (3)

技术文档 (2)

用户手册 (1)

宣传册 (5)

手册 (1)

会议文章 (5 of 7)

EDA Symbols, Footprints and 3D Models

All resources

硬件型号、CAD库及SVD (1)

质量与可靠性

样片和购买

精选视频