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SCT10N120AG

批量生产
储存到myST

Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

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  • This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

    主要特性

    • AEC-Q101 qualified
    • Very tight variation of on-resistance vs. temperature
    • Very high operating temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance
    阅读更多 阅读较少信息

样片和购买

产品型号
封装
包装类型
供货状态
ECCN (US)
Country of Origin
Approximate Price (US$)* / Qty
从ST订购
从分销商订购
SCT10N120AG HIP247 Tube
批⁠量⁠生⁠产
EAR99 CHINA 9.32 查看供货情况

...的经销商可用性SCT10N120AG

代理商名称
地区 库存 最小订购量 第三方链接
ARROW EUROPE 30 0 马上订购
RUTRONIK EUROPE 30 30 马上订购

代理商库存报告日期: 2020-04-01

代理商名称

ARROW

库存

30

Min.Order

0

地区

EUROPE 马上订购

RUTRONIK

库存

30

Min.Order

30

地区

EUROPE 马上订购

代理商库存报告日期: 2020-04-01

SCT10N120AG

封装

HIP247

包装类型

Tube
更多信息

Approximate Price (US$)* / Qty

9.32

...的经销商可用性SCT10N120AG

代理商名称
地区 库存 最小订购量 第三方链接
ARROW EUROPE 30 0 马上订购
RUTRONIK EUROPE 30 30 马上订购

代理商库存报告日期: 2020-04-01

代理商名称

ARROW

库存

30

Min.Order

0

地区

EUROPE 马上订购

RUTRONIK

库存

30

Min.Order

30

地区

EUROPE 马上订购

代理商库存报告日期: 2020-04-01

供货状态

批⁠量⁠生⁠产

Budgetary Price (US$)* / Qty

9.32

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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1200 V SiC MOSFETs
1200 V SiC MOSFETs

Industry's highest temperature rating of 200 °C

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技术文档

    • 描述 版本 文档大小 操作
      		DS12509
      Automotive silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) N-channel in an HiP247™ package       		2.0
      418.51 KB
      		PDF
      DS12509

      Automotive silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) N-channel in an HiP247™ package

      PDF
    • 描述 版本 文档大小 操作
      		AN4671
      如何调整碳化硅 MOSFET 驱动减少功率损耗       		1.0
      608.21 KB
      		PDF
      		AN5355
      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp       		1.0
      6.39 MB
      		PDF
      		AN3152
      The right technology for solar converters       		1.4
      416.3 KB
      		PDF
      AN4671

      如何调整碳化硅 MOSFET 驱动减少功率损耗

      PDF
      AN5355

      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

      PDF
      AN3152

      The right technology for solar converters

      PDF
    • 描述 版本 文档大小 操作
      		TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs       		2.2
      2.34 MB
      		PDF
      TA0349

      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

      PDF
    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      		SiC MOSFET: The real breakthrough in high-voltage switching 1.0
      515.17 KB
      		PDF
      		SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
      1.52 MB
      		PDF

      SiC MOSFET: The real breakthrough in high-voltage switching

      PDF

      SiC MOSFETs: The real breakthrough in high-voltage switching

      PDF
    • 描述 版本 文档大小 操作
      		Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      		PDF

      Electric vehicle (EV) ecosystem

      PDF
    • 描述 版本 文档大小 操作
      		3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
      760.82 KB
      		PDF
      		Cost benefits of a SiC MOSFET-based high frequency converter 1.0
      1.8 MB
      		PDF
      		Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
      582.21 KB
      		PDF
      		SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
      1.06 MB
      		PDF
      		Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
      980.73 KB
      		PDF
      		Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
      1.35 MB
      		PDF
      		Wide bandgap materials: revolution in automotive power electronics 1.0
      792.49 KB
      		PDF

      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

      PDF

      Cost benefits of a SiC MOSFET-based high frequency converter

      PDF

      Design rules for paralleling of Silicon Carbide Power MOSFETs

      PDF

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      PDF

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      PDF

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      PDF

      Wide bandgap materials: revolution in automotive power electronics

      PDF
产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
SCT10N120AG
批量生产
HIP247 Automotive Ecopack2

SCT10N120AG

Package:

HIP247

Material Declaration**:

PDF XML
More Info

Marketing Status

批量生产

Package

HIP247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

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