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SCT10N120AG

批量生产
储存到myST

Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

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  • This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

    主要特性

    • AEC-Q101 qualified
    • Very tight variation of on-resistance vs. temperature
    • Very high operating temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance
    阅读更多 阅读较少信息

样片和购买

产品型号
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SCT10N120AG HIP247 Tube
批量生产
- - EAR99 CHINA 没有经销商，请联系我们的销售办事处

SCT10N120AG

封装

HIP247

包装类型

Tube
More Info

单价(US$)

*

供货状态

批量生产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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1200 V SiC MOSFETs
1200 V SiC MOSFETs

Industry's highest temperature rating of 200 °C

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技术文档

    • 描述 版本 文档大小 操作
      		DS12509
      Automotive silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) N-channel in an HiP247™ package       		2.0
      418.51 KB
      		PDF
      DS12509

      Automotive silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) N-channel in an HiP247™ package

      PDF
    • 描述 版本 文档大小 操作
      		AN4671
      如何调整碳化硅 MOSFET 驱动减少功率损耗       		1.0
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      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp       		1.0
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      AN4671

      如何调整碳化硅 MOSFET 驱动减少功率损耗

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      AN5355

      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

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      The right technology for solar converters

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    • 描述 版本 文档大小 操作
      		TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs       		2.2
      2.34 MB
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      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

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    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
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      Spice model tutorial for Power MOSFETs

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出版刊物和宣传资料

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      		SiC MOSFET: The real breakthrough in high-voltage switching 1.0
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      		3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
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      		Cost benefits of a SiC MOSFET-based high frequency converter 1.0
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      		Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
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      		SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
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      980.73 KB
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      		Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
      1.35 MB
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      		Wide bandgap materials: revolution in automotive power electronics 1.0
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      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

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      Cost benefits of a SiC MOSFET-based high frequency converter

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      Design rules for paralleling of Silicon Carbide Power MOSFETs

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      SiC and Silicon MOSFET solution for high frequency DC-AC converters

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      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

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      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

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      Wide bandgap materials: revolution in automotive power electronics

      PDF
产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
SCT10N120AG
批量生产
HIP247 汽车 Ecopack2

SCT10N120AG

Package:

HIP247

Material Declaration**:

PDF XML
More Info

Marketing Status

批量生产

Package

HIP247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.