Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package

Download datasheet

Order from our distributors

Check availability
概观
工具与软件
资源
解决方案
质量与可靠性
Sales Briefcase
eDesignSuite
开始
样片和购买
Partner products
  • 该碳化硅功率MOSFET晶体管是利用宽禁带半导体材料的先进和创新特性生产出来的。因此,器件具有每区域无可比拟的导通状态电阻,以及卓越的开关性能,随温度变化极小。碳化硅(SiC)材料具有出色的热性能,与独有的HiP247™封装的器件外壳相结合,使设计人员能够采用符合行业标准的设计,显著提高器件的散热能力。这些特性使器件非常适用于高效率和高功率密度应用。

    主要特性

    • 导通电阻随温度变化敏感温度
    • 开关损耗随温度变化极小温度
    • 适应非常高的工作温度(200°C)
    • 稳定的超快速本体二极管
    • 低电容
    • 易于驱动

样片和购买

型号
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
Order from Distributors
Order from ST
SCT20N120 HIP247 Tube
Active
10.5 1000 EAR99 CHINA Check Availability

Distributor availability ofSCT20N120

代理商名称
地区 库存 最小订购量 Third party link
AVNET AMERICA 15 0 Order Now

代理商库存报告日期: 2019-07-16

代理商名称

AVNET

库存

15

Min.Order

0

地区

AMERICA Order Now

代理商库存报告日期: 2019-07-16

SCT20N120

Package

HIP247

Packing Type

Tube

Unit Price (US$)

10.5*

Distributor availability ofSCT20N120

代理商名称
地区 库存 最小订购量 Third party link
AVNET AMERICA 15 0 Order Now

代理商库存报告日期: 2019-07-16

代理商名称

AVNET

库存

15

Min.Order

0

地区

AMERICA Order Now

代理商库存报告日期: 2019-07-16

Marketing Status

Active

Unit Price (US$)

10.5

Quantity

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

Recommended for you

00 Files selected for download

技术文档

    • 描述 版本 文档大小 Action
      DS10360
      Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mΩ (typ., TJ=150 °C), N-channel in a HiP247™
      4.0
      493.81 KB
      PDF
      DS10360

      Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mΩ (typ., TJ=150 °C), N-channel in a HiP247™

    • 描述 版本 文档大小 Action
      AN4671
      如何调整碳化硅 MOSFET 驱动减少功率损耗
      1.0
      608.21 KB
      PDF
      AN5355
      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp
      1.0
      6.39 MB
      PDF
      AN3152
      The right technology for solar converters
      1.4
      416.3 KB
      PDF
      AN4671

      如何调整碳化硅 MOSFET 驱动减少功率损耗

      AN5355

      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

      AN3152

      The right technology for solar converters

    • 描述 版本 文档大小 Action
      TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
      2.2
      2.34 MB
      PDF
      TA0349

      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

    • 描述 版本 文档大小 Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

HW Model, CAD Libraries & SVD

    • 描述 版本 文档大小 Action
      SCT20N120 PSpice model 1.0
      7.88 KB
      ZIP

      SCT20N120 PSpice model

出版刊物和宣传资料

    • 描述 版本 文档大小 Action
      SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
      1.52 MB
      PDF

      SiC MOSFETs: The real breakthrough in high-voltage switching

    • 描述 版本 文档大小 Action
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

    • 描述 版本 文档大小 Action
      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
      760.82 KB
      PDF
      Cost benefits of a SiC MOSFET-based high frequency converter 1.0
      1.8 MB
      PDF
      Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
      582.21 KB
      PDF
      SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
      1.06 MB
      PDF
      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
      980.73 KB
      PDF
      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
      1.35 MB
      PDF
      Wide bandgap materials: revolution in automotive power electronics 1.0
      792.49 KB
      PDF

      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

      Cost benefits of a SiC MOSFET-based high frequency converter

      Design rules for paralleling of Silicon Carbide Power MOSFETs

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      Wide bandgap materials: revolution in automotive power electronics

型号 Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCT20N120
Active
HIP247 工业 Ecopack2

SCT20N120

Package:

HIP247

Material Declaration**:

Marketing Status

Active

Package

HIP247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.