Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package

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  • This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

    主要特性

    • AEC-Q101 qualified
    • Very tight variation of on-resistance vs. temperature
    • Very high operating temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance

样片和购买

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SCT20N120AG HIP247 Tube
批量生产
- - EAR99 CHINA 没有经销商,请联系我们的销售办事处

SCT20N120AG

封装

HIP247

包装类型

Tube

单价(US$)

*

供货状态

批量生产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
SCT20N120AG
批量生产
HIP247 汽车 Ecopack2

SCT20N120AG

Package:

HIP247

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

HIP247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.