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SCTH100N65G2-7AG

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Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

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  • This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

    主要特性

    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Low capacitance
    阅读更多 阅读较少信息

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SCTH100N65G2-7AG H2PAK-7 Tape And Reel
Active
- - EAR99 CHINA No availability of distributors reported, please contact our sales office

SCTH100N65G2-7AG

封装

H2PAK-7

包装类型

Tape And Reel
More Info

Unit Price (US$)

*

供货状态

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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1200 V SiC MOSFETs
1200 V SiC MOSFETs

Industry's highest temperature rating of 200 °C

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    • Description 版本 文档大小 操作
      		DS12773
      Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package       		1.0
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      		PDF
      DS12773

      Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

      PDF
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产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
SCTH100N65G2-7AG
Active
H2PAK-7 汽车 Ecopack1

SCTH100N65G2-7AG

Package:

H2PAK-7

Material Declaration**:

PDF XML
More Info

Marketing Status

Active

Package

H2PAK-7

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.