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SCTH100N65G2-7AG

批量生产
储存到myST

Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

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  • This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

    主要特性

    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Low capacitance
    阅读更多 阅读较少信息

样片和购买

产品型号
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包装类型
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从分销商订购
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SCTH100N65G2-7AG H2PAK-7 Tape And Reel
批量生产
- - EAR99 CHINA 没有经销商，请联系我们的销售办事处

SCTH100N65G2-7AG

封装

H2PAK-7

包装类型

Tape And Reel
More Info

单价(US$)

*

供货状态

批量生产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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1200 V SiC MOSFETs
1200 V SiC MOSFETs

Industry's highest temperature rating of 200 °C

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技术文档

    • 描述 版本 文档大小 操作
      		DS12773
      Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package       		1.0
      617.55 KB
      		PDF
      DS12773

      Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

      PDF
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      Wide bandgap materials: revolution in automotive power electronics

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产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
SCTH100N65G2-7AG
批量生产
H2PAK-7 汽车 Ecopack1

SCTH100N65G2-7AG

Package:

H2PAK-7

Material Declaration**:

PDF XML
More Info

Marketing Status

批量生产

Package

H2PAK-7

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.