Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

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  • This silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

    主要特性

    • Very tight variation of on-resistance vs. temperature
    • Very fast and robust intrinsic body diode
    • Low capacitance

样片和购买

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包装类型
供货状态
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SCTH35N65G2V-7 H2PAK-7 Tape And Reel
Active
15 1000 EAR99 CHINA No availability of distributors reported, please contact our sales office

SCTH35N65G2V-7

封装

H2PAK-7

包装类型

Tape And Reel

Unit Price (US$)

15.0*

供货状态

Active

Unit Price (US$)

15

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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      SiC MOSFET: The real breakthrough in high-voltage switching 1.0
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产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
SCTH35N65G2V-7
Active
H2PAK-7 工业 Ecopack2

SCTH35N65G2V-7

Package:

H2PAK-7

Material Declaration**:

Marketing Status

Active

Package

H2PAK-7

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.