SCTH35N65G2V-7

批量生产

Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

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  • This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

    主要特性

    • Very fast and robust intrinsic body diode
    • Low capacitance

样片和购买

产品型号
封装
包装类型
供货状态
ECCN (US)
Country of Origin
Approximate Price (US$)* / Qty
从ST订购
从分销商订购
SCTH35N65G2V-7 H2PAK-7 Tape And Reel
批⁠量⁠生⁠产
EAR99 CHINA 10.90 / 1k 查看供货情况

...的经销商可用性SCTH35N65G2V-7

代理商名称
地区 库存 最小订购量 第三方链接
ARROW EUROPE 50 0 马上订购
RUTRONIK EUROPE 50 1000 马上订购

代理商库存报告日期: 2020-03-31

代理商名称

ARROW

库存

50

Min.Order

0

地区

EUROPE 马上订购

RUTRONIK

库存

50

Min.Order

1000

地区

EUROPE 马上订购

代理商库存报告日期: 2020-03-31

SCTH35N65G2V-7

封装

H2PAK-7

包装类型

Tape And Reel

Approximate Price (US$)* / Qty

10.90 / 1k

...的经销商可用性SCTH35N65G2V-7

代理商名称
地区 库存 最小订购量 第三方链接
ARROW EUROPE 50 0 马上订购
RUTRONIK EUROPE 50 1000 马上订购

代理商库存报告日期: 2020-03-31

代理商名称

ARROW

库存

50

Min.Order

0

地区

EUROPE 马上订购

RUTRONIK

库存

50

Min.Order

1000

地区

EUROPE 马上订购

代理商库存报告日期: 2020-03-31

供货状态

批⁠量⁠生⁠产

Budgetary Price (US$)* / Qty

10.90 / 1k

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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技术文档

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      DS12047
      Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
      4.0
      613.37 KB
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      DS12047

      Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

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      如何调整碳化硅 MOSFET 驱动减少功率损耗
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      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp
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      AN4671

      如何调整碳化硅 MOSFET 驱动减少功率损耗

      AN5355

      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

      AN3152

      The right technology for solar converters

    • 描述 版本 文档大小 操作
      TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
      2.2
      2.34 MB
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      TA0349

      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
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      UM1575

      Spice model tutorial for Power MOSFETs

出版刊物和宣传资料

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      SiC MOSFET: The real breakthrough in high-voltage switching 1.0
      515.17 KB
      PDF
      SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
      1.52 MB
      PDF

      SiC MOSFET: The real breakthrough in high-voltage switching

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      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
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      Electric vehicle (EV) ecosystem

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      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
      760.82 KB
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      Cost benefits of a SiC MOSFET-based high frequency converter 1.0
      1.8 MB
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      Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
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      SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
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      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
      980.73 KB
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      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
      1.35 MB
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      Wide bandgap materials: revolution in automotive power electronics 1.0
      792.49 KB
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      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

      Cost benefits of a SiC MOSFET-based high frequency converter

      Design rules for paralleling of Silicon Carbide Power MOSFETs

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      Wide bandgap materials: revolution in automotive power electronics

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
SCTH35N65G2V-7
批量生产
H2PAK-7 Industrial Ecopack2

SCTH35N65G2V-7

Package:

H2PAK-7

Material Declaration**:

Marketing Status

批量生产

Package

H2PAK-7

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

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