产品概述
描述
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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所有功能
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Source sensing pin for increased efficiency
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特别推荐
EDA符号、封装和3D模型
STMicroelectronics - SCTH35N65G2V-7AG
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符号
封装
3D模型
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度（ºC） | Operating Temperature (°C) (min) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| SCTH35N65G2V-7AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 | H2PAK-7 | Tape and Reel | CHINA | EAR99 | NEC | - | - | - | |||
SCTH35N65G2V-7AG 批量生产
Budgetary Price (US$)*/Qty:
-
distributors
无法联系到经销商，请联系我们的销售办事处
封装:
H2PAK-7
包装类型:
Tape and Reel
RoHS:
-
Country of Origin:
CHINA
ECCN (US):
EAR99
ECCN (EU):
NEC
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