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SCTH35N65G2V-7AG

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汽车级碳化硅功率MOSFET，650 V、45 A、55 mOhm（典型值，TJ = 25 C），H2PAK-7封装

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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2^nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

主要特性
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Low capacitance
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产品规格

	描述	版本	文档大小	操作
	DS12029 Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package	4.0	616.34 KB	PDF

DS12029

Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

PDF

应用手册

描述	版本	文档大小	操作
AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗	1.0	608.21 KB	PDF
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp	1.0	6.39 MB	PDF
AN3152 The right technology for solar converters	1.4	416.3 KB	PDF

AN4671

如何调整碳化硅 MOSFET 驱动减少功率损耗

PDF

AN5355

Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

PDF

AN3152

The right technology for solar converters

PDF

技术文档

	描述	版本	文档大小	操作
	TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs	2.2	2.34 MB	PDF

TA0349

Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

PDF

用户手册

	描述	版本	文档大小	操作
	UM1575 Spice model tutorial for Power MOSFETs	1.3	1.51 MB	PDF

UM1575

Spice model tutorial for Power MOSFETs

PDF

出版刊物和宣传资料

宣传册

描述	版本	文档大小	操作
ST MOSFET Finder, the new app for Android and iOS	1.0	305.22 KB	PDF
STPOWER SiC MOSFET The real breakthrough in high-voltage switching	1.0	339.41 KB	PDF
SiC MOSFET, the real breakthrough in high-voltage switching	1.0	174.33 KB	PDF
SiC MOSFETs: The real breakthrough in high-voltage switching	3.0	1.52 MB	PDF

ST MOSFET Finder, the new app for Android and iOS

PDF

STPOWER SiC MOSFET The real breakthrough in high-voltage switching

PDF

SiC MOSFET, the real breakthrough in high-voltage switching

PDF

SiC MOSFETs: The real breakthrough in high-voltage switching

PDF

手册

	描述	版本	文档大小	操作
	Electric vehicle (EV) ecosystem	1.1	1.28 MB	PDF

Electric vehicle (EV) ecosystem

PDF

会议文章

描述	版本	文档大小	操作
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices	1.0	760.82 KB	PDF
Cost benefits of a SiC MOSFET-based high frequency converter	1.0	1.8 MB	PDF
Design rules for paralleling of Silicon Carbide Power MOSFETs	1.0	582.21 KB	PDF
SiC and Silicon MOSFET solution for high frequency DC-AC converters	1.0	1.06 MB	PDF
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films	1.0	980.73 KB	PDF
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate	1.0	1.35 MB	PDF
Wide bandgap materials: revolution in automotive power electronics	1.0	792.49 KB	PDF

3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

PDF

Cost benefits of a SiC MOSFET-based high frequency converter

PDF

Design rules for paralleling of Silicon Carbide Power MOSFETs

PDF

SiC and Silicon MOSFET solution for high frequency DC-AC converters

PDF

Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

PDF

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

PDF

Wide bandgap materials: revolution in automotive power electronics

PDF

质量与可靠性

产品型号	Marketing Status	封装	等级规格	符合RoHS级别	材料声明**
SCTH35N65G2V-7AG	批量生产	H2PAK-7	汽车应用	Ecopack1	PDF XML

SCTH35N65G2V-7AG

Package:

H2PAK-7

Material Declaration**:

PDF XML

More Info

Marketing Status

Package

H2PAK-7

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系销售支持。

样片和购买

产品型号

从分销商订购

从ST订购

供货状态

ECCN (US)

ECCN (EU)

包装类型

封装

温度（ºC）

Country of Origin

Budgetary Price (US$)*/Qty

最小值

最大值

SCTH35N65G2V-7AG

Available at 2 distributors

...的经销商可用性SCTH35N65G2V-7AG

代理商名称	地区	库存	最小订购量	第三方链接
ARROW	EUROPE	1000	0	马上订购
ANGLIA Live	EUROPE	7	1	马上订购

代理商库存报告日期: 2020-08-09

代理商名称

ARROW

库存

1000

Min.Order

地区

EUROPE 马上订购

ANGLIA Live

库存

Min.Order

地区

EUROPE 马上订购

代理商库存报告日期: 2020-08-09

EAR99

NEC

Tape And Reel

H2PAK-7

CHINA

16.0 / 1k

SCTH35N65G2V-7AG

供货状态

批量生产

ECCN (US)

EAR99

更多信息

Budgetary Price (US$)*/Qty

16.0 / 1k

...的经销商可用性SCTH35N65G2V-7AG

代理商名称	地区	库存	最小订购量	第三方链接
ARROW	EUROPE	1000	0	马上订购
ANGLIA Live	EUROPE	7	1	马上订购

代理商库存报告日期: 2020-08-09

代理商名称

ARROW

库存

1000

Min.Order

地区

EUROPE 马上订购

ANGLIA Live

库存

Min.Order

地区

EUROPE 马上订购

代理商库存报告日期: 2020-08-09

ECCN (EU)

NEC

包装类型

Tape And Reel

封装

H2PAK-7

Operating Temperature (°C)

(最小值)

(最大值)

Budgetary Price (US$)* / Qty

16.0 / 1k

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

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