搜索
取消
搜索历史
收藏

Please log in  to show your saved searches.

SCTH35N65G2V-7AG

批量生产
储存到myST

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

下载数据手册

Order from our distributors

查看供货情况
概述
工具与软件
资源
解决方案
质量与可靠性
Sales Briefcase
eDesignSuite
开始
样片和购买
Partner products
快速链接

  • This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

    主要特性

    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Low capacitance
    阅读更多 阅读较少信息

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
SCTH35N65G2V-7AG H2PAK-7 Tape And Reel
批量生产
16 1000 EAR99 CHINA 查看供货情况

Distributor availability ofSCTH35N65G2V-7AG

代理商名称
地区 库存 最小订购量 Third party link
ARROW EUROPE 1004 0 Order Now

代理商库存报告日期: 2019-10-13

代理商名称

ARROW

库存

1004

Min.Order

0

地区

EUROPE Order Now

代理商库存报告日期: 2019-10-13

SCTH35N65G2V-7AG

封装

H2PAK-7

包装类型

Tape And Reel
More Info

单价(US$)

16.0*

Distributor availability ofSCTH35N65G2V-7AG

代理商名称
地区 库存 最小订购量 Third party link
ARROW EUROPE 1004 0 Order Now

代理商库存报告日期: 2019-10-13

代理商名称

ARROW

库存

1004

Min.Order

0

地区

EUROPE Order Now

代理商库存报告日期: 2019-10-13

供货状态

批量生产

单价(US$)

16

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

精选 视频

查看全部
Getting started with eDesignSuite
Getting started with eDesignSuite

The smart way to design your application

1200 V SiC MOSFETs
1200 V SiC MOSFETs

Industry's highest temperature rating of 200 °C

适合您的资源

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      		DS12029
      Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package       		3.0
      617.48 KB
      		PDF
      DS12029

      Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

      PDF
    • 描述 版本 文档大小 操作
      		AN4671
      如何调整碳化硅 MOSFET 驱动减少功率损耗       		1.0
      608.21 KB
      		PDF
      		AN5355
      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp       		1.0
      6.39 MB
      		PDF
      		AN3152
      The right technology for solar converters       		1.4
      416.3 KB
      		PDF
      AN4671

      如何调整碳化硅 MOSFET 驱动减少功率损耗

      PDF
      AN5355

      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

      PDF
      AN3152

      The right technology for solar converters

      PDF
    • 描述 版本 文档大小 操作
      		TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs       		2.2
      2.34 MB
      		PDF
      TA0349

      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

      PDF
    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      		SiC MOSFET: The real breakthrough in high-voltage switching 1.0
      401.67 KB
      		PDF
      		SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
      1.52 MB
      		PDF

      SiC MOSFET: The real breakthrough in high-voltage switching

      PDF

      SiC MOSFETs: The real breakthrough in high-voltage switching

      PDF
    • 描述 版本 文档大小 操作
      		Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      		PDF

      Electric vehicle (EV) ecosystem

      PDF
    • 描述 版本 文档大小 操作
      		3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
      760.82 KB
      		PDF
      		Cost benefits of a SiC MOSFET-based high frequency converter 1.0
      1.8 MB
      		PDF
      		Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
      582.21 KB
      		PDF
      		SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
      1.06 MB
      		PDF
      		Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
      980.73 KB
      		PDF
      		Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
      1.35 MB
      		PDF
      		Wide bandgap materials: revolution in automotive power electronics 1.0
      792.49 KB
      		PDF

      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

      PDF

      Cost benefits of a SiC MOSFET-based high frequency converter

      PDF

      Design rules for paralleling of Silicon Carbide Power MOSFETs

      PDF

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      PDF

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      PDF

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      PDF

      Wide bandgap materials: revolution in automotive power electronics

      PDF
产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
SCTH35N65G2V-7AG
批量生产
H2PAK-7 汽车 Ecopack1

SCTH35N65G2V-7AG

Package:

H2PAK-7

Material Declaration**:

More Info

Marketing Status

批量生产

Package

H2PAK-7

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.