SCTH35N65G2V-7AG

批量生产

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

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  • This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

    主要特性

    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Low capacitance

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SCTH35N65G2V-7AG H2PAK-7 Tape And Reel
批量生产
16 1000 EAR99 CHINA 查看供货情况

Distributor availability ofSCTH35N65G2V-7AG

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地区 库存 最小订购量 Third party link
ARROW EUROPE 1004 0 Order Now

代理商库存报告日期: 2019-10-13

代理商名称

ARROW

库存

1004

Min.Order

0

地区

EUROPE Order Now

代理商库存报告日期: 2019-10-13

SCTH35N65G2V-7AG

封装

H2PAK-7

包装类型

Tape And Reel

单价(US$)

16.0*

Distributor availability ofSCTH35N65G2V-7AG

代理商名称
地区 库存 最小订购量 Third party link
ARROW EUROPE 1004 0 Order Now

代理商库存报告日期: 2019-10-13

代理商名称

ARROW

库存

1004

Min.Order

0

地区

EUROPE Order Now

代理商库存报告日期: 2019-10-13

供货状态

批量生产

单价(US$)

16

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

适合您的资源

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技术文档

    • 描述 版本 文档大小 操作
      DS12029
      Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
      3.0
      617.48 KB
      PDF
      DS12029

      Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

    • 描述 版本 文档大小 操作
      AN4671
      如何调整碳化硅 MOSFET 驱动减少功率损耗
      1.0
      608.21 KB
      PDF
      AN5355
      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp
      1.0
      6.39 MB
      PDF
      AN3152
      The right technology for solar converters
      1.4
      416.3 KB
      PDF
      AN4671

      如何调整碳化硅 MOSFET 驱动减少功率损耗

      AN5355

      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

      AN3152

      The right technology for solar converters

    • 描述 版本 文档大小 操作
      TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
      2.2
      2.34 MB
      PDF
      TA0349

      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      SiC MOSFET: The real breakthrough in high-voltage switching 1.0
      401.67 KB
      PDF
      SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
      1.52 MB
      PDF

      SiC MOSFET: The real breakthrough in high-voltage switching

      SiC MOSFETs: The real breakthrough in high-voltage switching

    • 描述 版本 文档大小 操作
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

    • 描述 版本 文档大小 操作
      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
      760.82 KB
      PDF
      Cost benefits of a SiC MOSFET-based high frequency converter 1.0
      1.8 MB
      PDF
      Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
      582.21 KB
      PDF
      SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
      1.06 MB
      PDF
      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
      980.73 KB
      PDF
      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
      1.35 MB
      PDF
      Wide bandgap materials: revolution in automotive power electronics 1.0
      792.49 KB
      PDF

      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

      Cost benefits of a SiC MOSFET-based high frequency converter

      Design rules for paralleling of Silicon Carbide Power MOSFETs

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      Wide bandgap materials: revolution in automotive power electronics

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
SCTH35N65G2V-7AG
批量生产
H2PAK-7 汽车 Ecopack1

SCTH35N65G2V-7AG

Package:

H2PAK-7

Material Declaration**:

Marketing Status

批量生产

Package

H2PAK-7

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.