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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
主要特性
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Low capacitance
样片和购买
| 型号 | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| SCTH35N65G2V-7AG | H2PAK-7 | Tape And Reel |
Active
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16 | 1000 | EAR99 | CHINA | Check Availability |
SCTH35N65G2V-7AG
Package
H2PAK-7Packing Type
Tape And ReelUnit Price (US$)
16.0*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
精选 视频
| 型号 | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| SCTH35N65G2V-7AG |
Active
|
H2PAK-7 | 汽车 | Ecopack1 |
|
SCTH35N65G2V-7AG
Package:
H2PAK-7Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
