产品概述
描述
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.-
所有功能
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Source sensing pin for increased efficiency
精选 视频
All resources
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产品规格 (1)
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11 Jan 2021 | 11 Jan 2021 |
应用手册 (3)
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技术文档 (2)
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用户手册 (1)
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21 Oct 2016 | 21 Oct 2016 |
宣传册 (5)
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手册 (1)
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23 Mar 2020 | 23 Mar 2020 |
会议文章 (5 of 7)
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23 Mar 2020 | 23 Mar 2020 |
EDA Symbols, Footprints and 3D Models
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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SCTH35N65G2V-7AG | 3 distributors | Free Sample Buy Direct | 批量生产 | EAR99 | NEC | Tape And Reel | H2PAK-7 | - | - | CHINA | 16.0 / 1k |