SCTH40N120G2V7AG

批量生产

汽车级碳化硅功率MOSFET,1200 V、33 A、75 mOhm(典型值,TJ = 25 C),H2PAK-7封装

下载数据手册 样片和购买
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质量与可靠性
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  • This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

    主要特性

    • AEC-Q101 qualified
    • Very high operating junction temperature capability (TJ = 175 °C)
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitance

适合您的资源

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS12969
      Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mΩ (typ., TJ = 25 °C) in an H²PAK-7 package
      2.0
      405.6 KB
      PDF
      DS12969

      Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mΩ (typ., TJ = 25 °C) in an H²PAK-7 package

    • 描述 版本 文档大小 操作
      AN4671
      如何调整碳化硅 MOSFET 驱动减少功率损耗
      1.0
      608.21 KB
      PDF
      AN5355
      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp
      1.0
      6.39 MB
      PDF
      AN3152
      The right technology for solar converters
      1.4
      416.3 KB
      PDF
      AN4671

      如何调整碳化硅 MOSFET 驱动减少功率损耗

      AN5355

      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

      AN3152

      The right technology for solar converters

    • 描述 版本 文档大小 操作
      TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
      2.2
      2.34 MB
      PDF
      TA0349

      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      ST MOSFET Finder, the new app for Android and iOS 1.0
      305.22 KB
      PDF
      STPOWER SiC MOSFET The real breakthrough in high-voltage switching 1.0
      339.41 KB
      PDF
      SiC MOSFET, the real breakthrough in high-voltage switching 1.0
      174.33 KB
      PDF
      SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
      1.52 MB
      PDF

      ST MOSFET Finder, the new app for Android and iOS

      STPOWER SiC MOSFET The real breakthrough in high-voltage switching

      SiC MOSFET, the real breakthrough in high-voltage switching

      SiC MOSFETs: The real breakthrough in high-voltage switching

    • 描述 版本 文档大小 操作
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

    • 描述 版本 文档大小 操作
      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
      760.82 KB
      PDF
      Cost benefits of a SiC MOSFET-based high frequency converter 1.0
      1.8 MB
      PDF
      Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
      582.21 KB
      PDF
      SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
      1.06 MB
      PDF
      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
      980.73 KB
      PDF
      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
      1.35 MB
      PDF
      Wide bandgap materials: revolution in automotive power electronics 1.0
      792.49 KB
      PDF

      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

      Cost benefits of a SiC MOSFET-based high frequency converter

      Design rules for paralleling of Silicon Carbide Power MOSFETs

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      Wide bandgap materials: revolution in automotive power electronics

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
SCTH40N120G2V7AG
批量生产
H2PAK-7 汽车应用 Ecopack1

SCTH40N120G2V7AG

Package:

H2PAK-7

Material Declaration**:

Marketing Status

批量生产

Package

H2PAK-7

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
SCTH40N120G2V7AG Available at 4 distributors

...的经销商可用性SCTH40N120G2V7AG

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 50 1 马上订购
ARROW EUROPE 75811 0 马上订购
Farnell Element14 EUROPE 48 1 马上订购
RUTRONIK EUROPE 50 1000 马上订购

代理商库存报告日期: 2020-08-10

代理商名称

DIGIKEY

库存

50

Min.Order

1

地区

WORLDWIDE 马上订购

ARROW

库存

75811

Min.Order

0

地区

EUROPE 马上订购

Farnell Element14

库存

48

Min.Order

1

地区

EUROPE 马上订购

RUTRONIK

库存

50

Min.Order

1000

地区

EUROPE 马上订购

代理商库存报告日期: 2020-08-10

批量生产
EAR99 NEC Tape And Reel H2PAK-7 - - CHINA

SCTH40N120G2V7AG

供货状态

批量生产

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

...的经销商可用性SCTH40N120G2V7AG

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 50 1 马上订购
ARROW EUROPE 75811 0 马上订购
Farnell Element14 EUROPE 48 1 马上订购
RUTRONIK EUROPE 50 1000 马上订购

代理商库存报告日期: 2020-08-10

代理商名称

DIGIKEY

库存

50

Min.Order

1

地区

WORLDWIDE 马上订购

ARROW

库存

75811

Min.Order

0

地区

EUROPE 马上订购

Farnell Element14

库存

48

Min.Order

1

地区

EUROPE 马上订购

RUTRONIK

库存

50

Min.Order

1000

地区

EUROPE 马上订购

代理商库存报告日期: 2020-08-10

ECCN (EU)

NEC

包装类型

Tape And Reel

封装

H2PAK-7

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商