SCTH70N120G2V-7

批量生产

Silicon carbide Power MOSFET 1200 V, 90 A, 21 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

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  • This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

    主要特性

    • Very high operating junction temperature capability (TJ = 175 °C)
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitances

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EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCTH70N120G2V-7

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质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
SCTH70N120G2V-7
批量生产
H2PAK-7 工业 Ecopack2

SCTH70N120G2V-7

Package:

H2PAK-7

Material Declaration**:

Marketing Status

批量生产

Package

H2PAK-7

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
SCTH70N120G2V-7 无法联系到经销商,请联系我们的销售办事处
批量生产
EAR99 NEC Tape And Reel H2PAK-7 - - CHINA

SCTH70N120G2V-7

供货状态

批量生产

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tape And Reel

封装

H2PAK-7

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商