搜索
取消
搜索历史
收藏

Please log in  to show your saved searches.

SCTW100N120G2AG

批量生产
储存到myST

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package

下载数据手册
概述
Online design
样片和购买
解决方案
文件
CAD资源
工具与软件
质量与可靠性
开始
Partner products
Sales Briefcase

产品概述

描述

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

  • 所有功能

    • AEC-Q101 qualified
    • High speed switching performance
    • Very fast and robust intrinsic body diode
    • Low capacitances
    • Very high operating junction temperature capability (TJ = 200 °C)
    阅读更多 阅读较少信息

特别推荐

All resources

Expand all categories
Resource title
Latest update

产品规格 (1)

Resource title
Latest update
DS12781 Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ., TJ=25 °C), in an HiP247 package 4.0
24 Jul 2020
24 Jul 2020
DS12781 Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ., TJ=25 °C), in an HiP247 package 4.0

应用手册 (3)

Resource title
Latest update
AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗 1.0
23 Apr 2021
23 Apr 2021
AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗 1.0
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
15 Jul 2019
15 Jul 2019
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
AN3152 The right technology for solar converters 1.4
13 Sep 2018
13 Sep 2018
AN3152 The right technology for solar converters 1.4

技术文档 (2)

Resource title
Latest update
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
03 Apr 2020
03 Apr 2020
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
TN1340 Recommendation for die sintering with Ag finishing 1.0
22 Sep 2020
22 Sep 2020
TN1340 Recommendation for die sintering with Ag finishing 1.0

用户手册 (1)

Resource title
Latest update
UM1575 Spice model tutorial for Power MOSFETs 1.3
21 Oct 2016
21 Oct 2016
UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (5)

Resource title
Latest update
ST MOSFET Finder, the new app for Android and iOS 1.0
08 May 2020
08 May 2020
ST MOSFET Finder, the new app for Android and iOS 1.0
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
01 Feb 2021
01 Feb 2021
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
14 Oct 2020
14 Oct 2020
STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
SiC MOSFET, the real breakthrough in high-voltage switching 1.0
15 May 2020
15 May 2020
SiC MOSFET, the real breakthrough in high-voltage switching 1.0
SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
30 Apr 2021
30 Apr 2021
SiC MOSFETs: The real breakthrough in high-voltage switching 3.0

手册 (1)

Resource title
Latest update
Electric vehicle (EV) ecosystem 1.1
23 Mar 2020
23 Mar 2020
Electric vehicle (EV) ecosystem 1.1

会议文章 (5 of 8)

Resource title
Latest update
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
23 Jul 2018
23 Jul 2018
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis 1.0
29 Apr 2021
29 Apr 2021
Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis 1.0
Cost benefits of a SiC MOSFET-based high frequency converter 1.0
23 Mar 2020
23 Mar 2020
Cost benefits of a SiC MOSFET-based high frequency converter 1.0
Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
25 Jul 2018
25 Jul 2018
Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
25 Jul 2018
25 Jul 2018
SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
23 Jul 2018
23 Jul 2018
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
23 Jul 2018
23 Jul 2018
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
Wide bandgap materials: revolution in automotive power electronics 1.0
23 Mar 2020
23 Mar 2020
Wide bandgap materials: revolution in automotive power electronics 1.0
Load more

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCTW100N120G2AG

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Symbols

Symbols

Footprints

Footprints

3D model

3D models

All resources

Expand all categories
Resource title
Latest update

SPICE models (1)

Resource title
Latest update
SCTW100N120G2AG SPICE model 1.0
29 Jan 2021
29 Jan 2021
SCTW100N120G2AG SPICE model 1.0

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
SCTW100N120G2AG
批量生产
HIP247 汽车应用 Ecopack2

SCTW100N120G2AG

Package:

HIP247

Material Declaration**:

PDF XML
More Info

Marketing Status

批量生产

Package

HIP247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度（ºC） Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
SCTW100N120G2AG 无法联系到经销商，请联系我们的销售办事处
批量生产
EAR99 NEC Tube HIP247 - - CHINA

SCTW100N120G2AG

供货状态

批量生产

ECCN (US)

EAR99
更多信息

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tube

封装

HIP247

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

  • 订阅电子报

关注我们

保留所有权利 © 2020 STMicroelectronics
使用条款 | 销售条款和条件 | 商标 | 查看隐私策略 | Manage Cookies
京ICP备14016349号-2

您知道吗？

Please provide email

Please enter code

Congratulations!

Simple subscription

Congratulations!

x

您可以开始跟踪此产品，以便在新的资源、工具和软件可用时接收更新。操作很简单，只需要1分钟。

您可以开始跟踪此产品，以便在新的资源、工具和软件可用时接收更新。操作很简单，只需要1分钟。

您可以开始跟踪此产品，以便在新的资源、工具和软件可用时接收更新。操作很简单，只需要1分钟。

Invalid code, please check the code sent to your email address and validate again. In case you did not receive any code please select 'I did not receive code'

您可以开始跟踪此产品，以便在新的资源、工具和软件可用时接收更新。操作很简单，只需要1分钟。

ST (as data controller according to the Privacy Policy) will keep a record of my navigation history and use that information as well as the personal data that I have communicated to ST for marketing purposes relevant to my interests. My personal data will be provided to ST affiliates and distributors of ST in countries located in the European Union and outside of the European Union for the same marketing purposes 

---------
I understand that I can withdraw my consent at any time through opt-out links embedded in communication I receive or by managing my account settings. I can also exercise other user’s rights at any time as described in the Privacy Policy.

ST will retain your browsing history and use details of the products and services that you have previously accessed, purchased or downloaded to make suggestions to you for other products and services which ST believe you will also be interested in.
ST uses the personal data that you provide directly to it and through your activity on ST websites in accordance with the Privacy Policy, to send you (directly or via ST local affiliates or distributors) newsletters, advertisements or other specific and targeted marketing material about ST products and services. Your personal data will be provided to ST local affiliates and distributors in countries located in the European Union and outside of the European Union. You can consult the list of ST local affiliates and distributors in our website’s Privacy Policy. To send you specific and targeted marketing material, the information that you provide directly to ST and/or through your activity on ST websites may also be combined with other information that ST obtains from you in another context (e.g. if you enter into a business relationship with ST, its local affiliates or distributors).

现在，您订阅了
- SCTW100N120G2AG

You can re-use the validation code to subscribe to another product or application.

Sorry, there was a problem on our servers. Please try again.