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SCTW100N120G2AG

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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package

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产品概述

描述

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2^nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

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AEC-Q101 qualified

High speed switching performance

Very fast and robust intrinsic body diode

Low capacitances

Very high operating junction temperature capability (T_J = 200 °C)
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Silicon Carbide - Energy handling for a sustainable future

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1200 V SiC MOSFETs

Industry's highest temperature rating of 200 °C

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	Resource title	版本	Latest update

SPICE models (1)

	Resource title	版本	Latest update
ZIP	SCTW100N120G2AG SPICE model	1.0	29 Jan 2021	29 Jan 2021 SCTW100N120G2AG SPICE model 1.0

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质量与可靠性

产品型号	Marketing Status	封装	等级规格	符合RoHS级别	材料声明**
SCTW100N120G2AG	批量生产	HIP247	汽车应用	Ecopack2	PDF XML

SCTW100N120G2AG

Package:

HIP247

Material Declaration**:

PDF XML

More Info

Marketing Status

Package

HIP247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系销售支持。

样片和购买

	产品型号	从分销商订购	从ST订购	供货状态	ECCN (US)	ECCN (EU)	包装类型	封装	温度（ºC）		Country of Origin	Budgetary Price (US$)*/Qty
	产品型号	从分销商订购	从ST订购	供货状态	ECCN (US)	ECCN (EU)	包装类型	封装	最小值	最大值	Country of Origin	Budgetary Price (US$)*/Qty
	SCTW100N120G2AG	无法联系到经销商，请联系我们的销售办事处		批量生产	EAR99	NEC	Tube	HIP247	-	-	CHINA

SCTW100N120G2AG

供货状态

批量生产

ECCN (US)

EAR99

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Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tube

封装

HIP247

Operating Temperature (°C)

(最小值)

(最大值)

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

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SCTW100N120G2AG

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