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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
主要特性
- AEC-Q101 qualified
- High speed switching performance
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (TJ = 200 °C)
精选 视频
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产品规格 (1)
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手册 (1)
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会议文章 (5 of 7)
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EDA Symbols, Footprints and 3D Models
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硬件型号、CAD库及SVD (1)
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ZIP | 22 Jan 2021 |
22 Jan 2021
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样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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SCTW100N120G2AG | 无法联系到经销商,请联系我们的销售办事处 |
批量生产
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EAR99 | NEC | Tube | HIP247 | - | - | CHINA |
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty