SCTW35N65G2VAG

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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2^nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

主要特性
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Low capacitance
阅读更多阅读较少信息

样片和购买

产品型号	封装	包装类型	供货状态	预算价格(US$)	数量	ECCN (US)	Country of Origin	从分销商订购	从ST订购
SCTW35N65G2VAG	HIP247	Tube	批量生产	-	-	EAR99	CHINA	没有经销商，请联系我们的销售办事处

SCTW35N65G2VAG

封装

HIP247

包装类型

Tube

More Info

单价(US$)

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

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技术文档

产品规格

	描述	版本	文档大小	操作
	DS12885 Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247™ package	1.0	393.79 KB	PDF

DS12885

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247™ package

PDF

应用手册

描述	版本	文档大小	操作
AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗	1.0	608.21 KB	PDF
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp	1.0	6.39 MB	PDF
AN3152 The right technology for solar converters	1.4	416.3 KB	PDF

AN4671

如何调整碳化硅 MOSFET 驱动减少功率损耗

PDF

AN5355

Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

PDF

AN3152

The right technology for solar converters

PDF

技术文档

	描述	版本	文档大小	操作
	TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs	2.2	2.34 MB	PDF

TA0349

Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

PDF

用户手册
- 描述版本文档大小操作
  
  UM1575
  Spice model tutorial for Power MOSFETs 1.3
  1.51 MB
  PDF
  
  UM1575
  
  Spice model tutorial for Power MOSFETs
  
  PDF

	描述	版本	文档大小	操作
	UM1575 Spice model tutorial for Power MOSFETs	1.3	1.51 MB	PDF

出版刊物和宣传资料

宣传册

	描述	版本	文档大小	操作
	SiC MOSFET: The real breakthrough in high-voltage switching	1.0	401.67 KB	PDF
	SiC MOSFETs: The real breakthrough in high-voltage switching	3.0	1.52 MB	PDF

SiC MOSFET: The real breakthrough in high-voltage switching

PDF

SiC MOSFETs: The real breakthrough in high-voltage switching

PDF

手册
- 描述版本文档大小操作
  
  Electric vehicle (EV) ecosystem 1.1
  1.28 MB
  PDF
  
  Electric vehicle (EV) ecosystem
  
  PDF

	描述	版本	文档大小	操作
	Electric vehicle (EV) ecosystem	1.1	1.28 MB	PDF

会议文章

描述	版本	文档大小	操作
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices	1.0	760.82 KB	PDF
Cost benefits of a SiC MOSFET-based high frequency converter	1.0	1.8 MB	PDF
Design rules for paralleling of Silicon Carbide Power MOSFETs	1.0	582.21 KB	PDF
SiC and Silicon MOSFET solution for high frequency DC-AC converters	1.0	1.06 MB	PDF
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films	1.0	980.73 KB	PDF
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate	1.0	1.35 MB	PDF
Wide bandgap materials: revolution in automotive power electronics	1.0	792.49 KB	PDF

3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

PDF

Cost benefits of a SiC MOSFET-based high frequency converter

PDF

Design rules for paralleling of Silicon Carbide Power MOSFETs

PDF

SiC and Silicon MOSFET solution for high frequency DC-AC converters

PDF

Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

PDF

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

PDF

Wide bandgap materials: revolution in automotive power electronics

PDF

产品型号	供货状态	封装	等级规格	符合RoHS级别	Material Declaration**
SCTW35N65G2VAG	批量生产	HIP247	汽车	Ecopack2

SCTW35N65G2VAG

Package:

HIP247

Material Declaration**:

More Info

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.