SCTW60N120G2AG

批量生产

Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mOhm (typ., TJ = 25 C) in an HiP247 package

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  • This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

    主要特性

    • AEC-Q101 qualified
    • High speed switching performance
    • Very fast and robust intrinsic body diode
    • Low capacitances
    • Very high operating junction temperature capability (TJ = 200 °C)

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技术文档

    • 描述 版本 文档大小 操作
      DS13347
      Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
      1.0
      192.35 KB
      PDF
      DS13347

      Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package

    • 描述 版本 文档大小 操作
      AN4671
      如何调整碳化硅 MOSFET 驱动减少功率损耗
      1.0
      608.21 KB
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      AN5355
      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp
      1.0
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      AN3152
      The right technology for solar converters
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      416.3 KB
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      AN4671

      如何调整碳化硅 MOSFET 驱动减少功率损耗

      AN5355

      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

      AN3152

      The right technology for solar converters

    • 描述 版本 文档大小 操作
      TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
      2.2
      2.34 MB
      PDF
      TN1340
      Recommendation for die sintering with Ag finishing
      1.0
      1.34 MB
      PDF
      TA0349

      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

      TN1340

      Recommendation for die sintering with Ag finishing

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      SCTW60N120G2AG Pspice Model 1.0
      5.99 KB
      ZIP

      SCTW60N120G2AG Pspice Model

出版刊物和宣传资料

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      ST MOSFET Finder, the new app for Android and iOS 1.0
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      SiC MOSFET, the real breakthrough in high-voltage switching 1.0
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      SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
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      ST MOSFET Finder, the new app for Android and iOS

      STPOWER SiC MOSFET The real breakthrough in high-voltage switching

      SiC MOSFET, the real breakthrough in high-voltage switching

      SiC MOSFETs: The real breakthrough in high-voltage switching

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      Electric vehicle (EV) ecosystem 1.1
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      Electric vehicle (EV) ecosystem

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      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
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      Cost benefits of a SiC MOSFET-based high frequency converter 1.0
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      SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
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      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
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      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
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      Wide bandgap materials: revolution in automotive power electronics 1.0
      792.49 KB
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      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

      Cost benefits of a SiC MOSFET-based high frequency converter

      Design rules for paralleling of Silicon Carbide Power MOSFETs

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      Wide bandgap materials: revolution in automotive power electronics

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
SCTW60N120G2AG
批量生产
HIP247 汽车应用 Ecopack2

SCTW60N120G2AG

Package:

HIP247

Material Declaration**:

Marketing Status

批量生产

Package

HIP247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
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供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
SCTW60N120G2AG 没有经销商,请联系我们的销售办事处
批量生产
EAR99 NEC Tube HIP247 - - CHINA

SCTW60N120G2AG

供货状态

批量生产

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tube

封装

HIP247

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商