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SCTW70N120G2V

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碳化硅功率MOSFET，650 V、100 A、22 mOhm（典型值，TJ = 150 C），HiP247封装

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产品概述

描述

该碳化硅功率MOSFET晶体管是利用宽禁带半导体材料的先进和创新特性生产出来的。因此，器件具有每区域无可比拟的导通状态电阻，以及卓越的开关性能，随温度变化极小。碳化硅（SiC）材料具有出色的热性能，使设计人员能够采用符合行业标准的设计，显著提高器件的散热能力。这些特性使器件非常适用于高效率和高功率密度应用。

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工业

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Resource title
版本
Latest update

产品规格 (1)

Resource title
版本
Latest update
DS12008 Silicon carbide Power MOSFET 1200 V, 91 A, 21 mΩ (typ., TJ = 25 °C) in an HiP247 package
3.0 01 Sep 2020
01 Sep 2020
DS12008 Silicon carbide Power MOSFET 1200 V, 91 A, 21 mΩ (typ., TJ = 25 °C) in an HiP247 package 3.0

应用手册 (3)

Resource title
版本
Latest update
AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗
1.0 06 Jul 2021
06 Jul 2021
AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗 1.0
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp
1.0 15 Jul 2019
15 Jul 2019
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
AN3152 The right technology for solar converters
1.4 13 Sep 2018
13 Sep 2018
AN3152 The right technology for solar converters 1.4

技术文档 (2)

Resource title
版本
Latest update
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
2.2 06 Jul 2021
06 Jul 2021
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
TN1340 Recommendation for die sintering with Ag finishing
1.0 22 Sep 2020
22 Sep 2020
TN1340 Recommendation for die sintering with Ag finishing 1.0

用户手册 (1)

Resource title
版本
Latest update
UM1575 Spice model tutorial for Power MOSFETs
1.3 21 Oct 2016
21 Oct 2016
UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (5 of 6)

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Bridgeless Totem Pole PFC with SCR Inrush Current Limiter
1.0 28 Jul 2021
28 Jul 2021
Bridgeless Totem Pole PFC with SCR Inrush Current Limiter 1.0
ST MOSFET Finder, the new app for Android and iOS
1.0 08 May 2020
08 May 2020
ST MOSFET Finder, the new app for Android and iOS 1.0
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching
1.0 01 Feb 2021
01 Feb 2021
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
STPOWER TRANSISTORS 7/10 years longevity commitment program
1.0 14 Oct 2020
14 Oct 2020
STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
SiC MOSFET, the real breakthrough in high-voltage switching
1.0 15 May 2020
15 May 2020
SiC MOSFET, the real breakthrough in high-voltage switching 1.0
SiC MOSFETs: The real breakthrough in high-voltage switching
3.0 25 May 2021
25 May 2021
SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
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手册 (1)

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Electric vehicle (EV) ecosystem
1.1 03 Jun 2021
03 Jun 2021
Electric vehicle (EV) ecosystem 1.1

会议文章 (5 of 8)

Resource title
版本
Latest update
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices
1.0 23 Jul 2018
23 Jul 2018
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis
1.0 29 Apr 2021
29 Apr 2021
Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis 1.0
Cost benefits of a SiC MOSFET-based high frequency converter
1.0 23 Mar 2020
23 Mar 2020
Cost benefits of a SiC MOSFET-based high frequency converter 1.0
Design rules for paralleling of Silicon Carbide Power MOSFETs
1.0 25 Jul 2018
25 Jul 2018
Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
SiC and Silicon MOSFET solution for high frequency DC-AC converters
1.0 25 Jul 2018
25 Jul 2018
SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films
1.0 23 Jul 2018
23 Jul 2018
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate
1.0 23 Jul 2018
23 Jul 2018
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
Wide bandgap materials: revolution in automotive power electronics
1.0 23 Mar 2020
23 Mar 2020
Wide bandgap materials: revolution in automotive power electronics 1.0
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EDA符号、封装和3D模型

STMicroelectronics - SCTW70N120G2V

为您的应用下载所有EDA符号、封装和3D模型，加快您的设计速度。您可以从大量CAD格式中进行选择，以匹配您的设计工具链。

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SPICE models (1)

Resource title
版本
Latest update
SCTW70N120G2V SPICE model
1.0 17 Feb 2021
17 Feb 2021
SCTW70N120G2V SPICE model 1.0

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
SCTW70N120G2V
批量生产
HIP247 工业 Ecopack2

SCTW70N120G2V

Package:

HIP247

Material Declaration**:

More Info

Marketing Status

批量生产

Package

HIP247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度（ºC） Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
SCTW70N120G2V Available at 2 distributors

经销商的可用性SCTW70N120G2V

代理商名称
地区 库存 最小订购量 第三方链接
Newark Element14 AMERICA 10 0 马上订购
Farnell Element14 EUROPE 78 1 马上订购

代理商库存报告日期: 2021-07-27

代理商名称

Newark Element14

库存

10

Min.Order

0

地区

AMERICA 马上订购

Farnell Element14

库存

78

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2021-07-27

批量生产
EAR99 NEC Tube HIP247 - - CHINA 28.0 / 100

SCTW70N120G2V

供货状态

批量生产

ECCN (US)

EAR99
更多信息

Budgetary Price (US$)*/Qty

28.0 / 100

经销商的可用性SCTW70N120G2V

代理商名称
地区 库存 最小订购量 第三方链接
Newark Element14 AMERICA 10 0 马上订购
Farnell Element14 EUROPE 78 1 马上订购

代理商库存报告日期: 2021-07-27

代理商名称

Newark Element14

库存

10

Min.Order

0

地区

AMERICA 马上订购

Farnell Element14

库存

78

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2021-07-27

ECCN (EU)

NEC

包装类型

Tube

封装

HIP247

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

28.0 / 100

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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