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SCTW70N120G2V

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碳化硅功率MOSFET，650 V、100 A、22 mOhm（典型值，TJ = 150 C），HiP247封装

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This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

主要特性
- Very high operating junction temperature capability (T_J = 200 °C)
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitances
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All resources

产品规格 (1)

	Resource title		Latest update
PDF	DS12008 Silicon carbide Power MOSFET 1200 V, 91 A, 21 mΩ (typ., TJ = 25 °C) in an HiP247 package 3.0		25 Sep 2020	25 Sep 2020 DS12008 Silicon carbide Power MOSFET 1200 V, 91 A, 21 mΩ (typ., TJ = 25 °C) in an HiP247 package 3.0

应用手册 (3)

	Resource title	Latest update
PDF	AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗 1.0	21 Aug 2015	21 Aug 2015 AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗 1.0
PDF	AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0	15 Jul 2019	15 Jul 2019 AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
PDF	AN3152 The right technology for solar converters 1.4	13 Sep 2018	13 Sep 2018 AN3152 The right technology for solar converters 1.4

技术文档 (2)

	Resource title		Latest update
PDF	TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2		23 Feb 2015	23 Feb 2015 TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
PDF	TN1340 Recommendation for die sintering with Ag finishing 1.0		22 Sep 2020	22 Sep 2020 TN1340 Recommendation for die sintering with Ag finishing 1.0

用户手册 (1)

	Resource title		Latest update
PDF	UM1575 Spice model tutorial for Power MOSFETs 1.3		21 Oct 2016	21 Oct 2016 UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (4)

	Resource title	Latest update
PDF	ST MOSFET Finder, the new app for Android and iOS 1.0	08 May 2020	08 May 2020 ST MOSFET Finder, the new app for Android and iOS 1.0
PDF	STPOWER SiC MOSFET The real breakthrough in high-voltage switching 1.0	22 Jul 2020	22 Jul 2020 STPOWER SiC MOSFET The real breakthrough in high-voltage switching 1.0
PDF	SiC MOSFET, the real breakthrough in high-voltage switching 1.0	15 May 2020	15 May 2020 SiC MOSFET, the real breakthrough in high-voltage switching 1.0
PDF	SiC MOSFETs: The real breakthrough in high-voltage switching 3.0	23 Mar 2020	23 Mar 2020 SiC MOSFETs: The real breakthrough in high-voltage switching 3.0

手册 (1)

	Resource title		Latest update
PDF	Electric vehicle (EV) ecosystem 1.1		23 Mar 2020	23 Mar 2020 Electric vehicle (EV) ecosystem 1.1

会议文章 (5 of 7)

	Resource title	Latest update
PDF	3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0	23 Jul 2018	23 Jul 2018 3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
PDF	Cost benefits of a SiC MOSFET-based high frequency converter 1.0	23 Mar 2020	23 Mar 2020 Cost benefits of a SiC MOSFET-based high frequency converter 1.0
PDF	Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0	25 Jul 2018	25 Jul 2018 Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
PDF	SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0	25 Jul 2018	25 Jul 2018 SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
PDF	Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0	23 Jul 2018	23 Jul 2018 Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
PDF	Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0	23 Jul 2018	23 Jul 2018 Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
PDF	Wide bandgap materials: revolution in automotive power electronics 1.0	23 Mar 2020	23 Mar 2020 Wide bandgap materials: revolution in automotive power electronics 1.0

CAD/EDA Symbols, Footprints and Models

质量与可靠性

产品型号	Marketing Status	封装	等级规格	符合RoHS级别	材料声明**
SCTW70N120G2V	批量生产	HIP247	工业	Ecopack2

SCTW70N120G2V

Package:

HIP247

Material Declaration**:

More Info

Marketing Status

Package

HIP247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系销售支持。

样片和购买

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Budgetary Price (US$)*/Qty

最小值

最大值

SCTW70N120G2V

Available at 2 distributors

...的经销商可用性SCTW70N120G2V

代理商名称	地区	库存	最小订购量	第三方链接
DIGIKEY	WORLDWIDE	44	1	马上订购
ARROW	EUROPE	300	0	马上订购

代理商库存报告日期: 2020-09-30

代理商名称

DIGIKEY

库存

Min.Order

地区

WORLDWIDE 马上订购

ARROW

库存

300

Min.Order

地区

EUROPE 马上订购

代理商库存报告日期: 2020-09-30

EAR99

NEC

Tube

HIP247

CHINA

SCTW70N120G2V

供货状态

批量生产

ECCN (US)

EAR99

更多信息

Budgetary Price (US$)*/Qty

...的经销商可用性SCTW70N120G2V

代理商名称	地区	库存	最小订购量	第三方链接
DIGIKEY	WORLDWIDE	44	1	马上订购
ARROW	EUROPE	300	0	马上订购

代理商库存报告日期: 2020-09-30

代理商名称

DIGIKEY

库存

Min.Order

地区

WORLDWIDE 马上订购

ARROW

库存

300

Min.Order

地区

EUROPE 马上订购

代理商库存报告日期: 2020-09-30

ECCN (EU)

NEC

包装类型

Tube

封装

HIP247

Operating Temperature (°C)

(最小值)

(最大值)

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

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