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This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
主要特性
- Very tight variation of on-resistance vs. temperature
- Slight variation of switching losses vs. temperature
- Very high operating temperature capability (200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
- Easy to drive
样片和购买
| 产品型号 | 封装 | 包装类型 | 供货状态 | ECCN (US) | Country of Origin | Budgetary Price (US$)*/Qty | 从ST订购 | 从分销商订购 |
|---|---|---|---|---|---|---|---|---|
| SCTWA10N120 | HIP247 long leads | Tube | 批量生产 | EAR99 | PHILIPPINES | 8.5 / 1k | 没有经销商，请联系我们的销售办事处 |
SCTWA10N120
封装
HIP247 long leads包装类型
TubeBudgetary Price (US$)*/Qty
8.5 / 1k精选 视频
| 产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| SCTWA10N120 | 批量生产 | HIP247 long leads | Industrial | Ecopack2 | |
SCTWA10N120
Package:
HIP247 long leadsMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
