-
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
主要特性
- Very tight variation of on-resistance vs. temperature
- Slight variation of switching losses vs. temperature
- Very high operating temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
样片和购买
| 产品型号 | 封装 | 包装类型 | 供货状态 | ECCN (US) | Country of Origin | Approximate Price (US$)* / Qty | 从ST订购 | 从分销商订购 |
|---|---|---|---|---|---|---|---|---|
| SCTWA20N120 | TO-247 long leads | Tube | 批量生产 | EAR99 | CHINA | 13.15 / 1k | 查看供货情况 |
SCTWA20N120
封装
TO-247 long leads包装类型
TubeApproximate Price (US$)* / Qty
13.15 / 1k