产品概述
描述
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.-
所有功能
- Very tight variation of on-resistance vs. temperature
- Slight variation of switching losses vs. temperature
- Very high operating temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
精选 视频
SiC can be applied to all types of energy handling
全部资源
| Resource title | 版本 | Latest update |
|---|
产品规格 (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 1.0 | 10 Jun 2016 | 10 Jun 2016 |
应用手册 (3)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 1.0 | 06 Jul 2021 | 06 Jul 2021 | ||
| 1.0 | 15 Jul 2019 | 15 Jul 2019 | ||
| 1.4 | 13 Sep 2018 | 13 Sep 2018 |
技术文档 (2)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 2.2 | 06 Jul 2021 | 06 Jul 2021 | ||
| 1.0 | 22 Sep 2020 | 22 Sep 2020 |
用户手册 (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 1.3 | 21 Oct 2016 | 21 Oct 2016 |
宣传册 (5 of 6)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 1.0 | 28 Jul 2021 | 28 Jul 2021 | ||
| 1.0 | 08 May 2020 | 08 May 2020 | ||
| 1.0 | 01 Feb 2021 | 01 Feb 2021 | ||
| 1.0 | 14 Oct 2020 | 14 Oct 2020 | ||
| 1.0 | 15 May 2020 | 15 May 2020 | ||
| 3.0 | 25 May 2021 | 25 May 2021 |
手册 (1)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 1.1 | 03 Jun 2021 | 03 Jun 2021 |
会议文章 (5 of 8)
| Resource title | 版本 | Latest update | ||
|---|---|---|---|---|
| 1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
| 1.0 | 29 Apr 2021 | 29 Apr 2021 | ||
| 1.0 | 23 Mar 2020 | 23 Mar 2020 | ||
| 1.0 | 25 Jul 2018 | 25 Jul 2018 | ||
| 1.0 | 25 Jul 2018 | 25 Jul 2018 | ||
| 1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
| 1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
| 1.0 | 23 Mar 2020 | 23 Mar 2020 |
EDA符号、封装和3D模型
STMicroelectronics - SCTWA20N120
为您的应用下载所有EDA符号、封装和3D模型，加快您的设计速度。您可以从大量CAD格式中进行选择，以匹配您的设计工具链。
符号
封装
3D模型
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| SCTWA20N120 | 2 distributors | Buy Direct | 批量生产 | EAR99 | NEC | Tube | HIP247 long leads | - | - | CHINA | 9.6 / 100 | |
