Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package

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  • This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

    主要特性

    • Very tight variation of on-resistance vs. temperature
    • Slight variation of switching losses vs. temperature
    • Very high operating temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance

样片和购买

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包装类型
供货状态
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SCTWA20N120 TO-247 long leads Tube
Active
10.5 1000 EAR99 CHINA No availability of distributors reported, please contact our sales office

SCTWA20N120

封装

TO-247 long leads

包装类型

Tube

Unit Price (US$)

10.5*

供货状态

Active

Unit Price (US$)

10.5

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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      DS11689
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产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
SCTWA20N120
Active
TO-247 long leads 工业 Ecopack2

SCTWA20N120

Package:

TO-247 long leads

Material Declaration**:

Marketing Status

Active

Package

TO-247 long leads

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.