SCTWA20N120

批量生产

碳化硅功率MOSFET,1200 V、20 A、189 mOhm(典型值,Tj = 150 C),HiP247长引线封装

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样片和购买
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质量与可靠性
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  • This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

    主要特性

    • Very tight variation of on-resistance vs. temperature
    • Slight variation of switching losses vs. temperature
    • Very high operating temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance

适合您的资源

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技术文档

    • 描述 版本 文档大小 操作
      DS11689
      Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C) N-channel in a HiP247 long leads package
      1.0
      685.79 KB
      PDF
      DS11689

      Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C) N-channel in a HiP247 long leads package

    • 描述 版本 文档大小 操作
      AN4671
      如何调整碳化硅 MOSFET 驱动减少功率损耗
      1.0
      608.21 KB
      PDF
      AN5355
      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp
      1.0
      6.39 MB
      PDF
      AN3152
      The right technology for solar converters
      1.4
      416.3 KB
      PDF
      AN4671

      如何调整碳化硅 MOSFET 驱动减少功率损耗

      AN5355

      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

      AN3152

      The right technology for solar converters

    • 描述 版本 文档大小 操作
      TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
      2.2
      2.34 MB
      PDF
      TA0349

      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      ST MOSFET Finder, the new app for Android and iOS 1.0
      305.22 KB
      PDF
      SiC MOSFET, the real breakthrough in high-voltage switching 1.0
      174.33 KB
      PDF
      SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
      1.52 MB
      PDF

      ST MOSFET Finder, the new app for Android and iOS

      SiC MOSFET, the real breakthrough in high-voltage switching

      SiC MOSFETs: The real breakthrough in high-voltage switching

    • 描述 版本 文档大小 操作
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

    • 描述 版本 文档大小 操作
      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
      760.82 KB
      PDF
      Cost benefits of a SiC MOSFET-based high frequency converter 1.0
      1.8 MB
      PDF
      Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
      582.21 KB
      PDF
      SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
      1.06 MB
      PDF
      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
      980.73 KB
      PDF
      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
      1.35 MB
      PDF
      Wide bandgap materials: revolution in automotive power electronics 1.0
      792.49 KB
      PDF

      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

      Cost benefits of a SiC MOSFET-based high frequency converter

      Design rules for paralleling of Silicon Carbide Power MOSFETs

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      Wide bandgap materials: revolution in automotive power electronics

质量与可靠性

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
SCTWA20N120
批量生产
TO-247 long leads Industrial Ecopack2

SCTWA20N120

Package:

TO-247 long leads

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

TO-247 long leads

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
封装
包装类型
供货状态
ECCN (US)
Country of Origin
Budgetary Price (US$)*/Qty
SCTWA20N120 Available at 2 distributors

...的经销商可用性SCTWA20N120

代理商名称
地区 Stock 最小订购量 第三方链接
ARROW EUROPE 300 0 马上订购
RUTRONIK EUROPE 30 30 马上订购

代理商库存报告日期: 2020-07-06

代理商名称

ARROW

Stock

300

Min.Order

0

地区

EUROPE 马上订购

RUTRONIK

Stock

30

Min.Order

30

地区

EUROPE 马上订购

代理商库存报告日期: 2020-07-06

TO-247 long leads Tube
批量生产
EAR99 CHINA 10.5 / 1k

SCTWA20N120

封装

TO-247 long leads

包装类型

Tube

Budgetary Price (US$)*/Qty

10.5 / 1k

...的经销商可用性SCTWA20N120

代理商名称
地区 Stock 最小订购量 第三方链接
ARROW EUROPE 300 0 马上订购
RUTRONIK EUROPE 30 30 马上订购

代理商库存报告日期: 2020-07-06

代理商名称

ARROW

Stock

300

Min.Order

0

地区

EUROPE 马上订购

RUTRONIK

Stock

30

Min.Order

30

地区

EUROPE 马上订购

代理商库存报告日期: 2020-07-06

供货状态

批量生产

Budgetary Price (US$)* / Qty

10.5 / 1k

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商