Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package

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  • This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

    主要特性

    • Very tight variation of on-resistance vs. temperature
    • Very high operating temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance

样片和购买

型号
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
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SCTWA30N120 TO-247 long leads Tube
Active
22.5 1000 EAR99 CHINA No availability of distributors reported, please contact our sales office

SCTWA30N120

Package

TO-247 long leads

Packing Type

Tube

Unit Price (US$)

22.5*

Marketing Status

Active

Unit Price (US$)

22.5

Quantity

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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技术文档

    • 描述 版本 文档大小 Action
      DS11470
      Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ= 150 °C), in an HiP247™ long leads package
      2.0
      787.63 KB
      PDF
      DS11470

      Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ= 150 °C), in an HiP247™ long leads package

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      TA0349
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出版刊物和宣传资料

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      Design rules for paralleling of Silicon Carbide Power MOSFETs

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      Wide bandgap materials: revolution in automotive power electronics

型号 Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTWA30N120
Active
TO-247 long leads 工业 Ecopack2

SCTWA30N120

Package:

TO-247 long leads

Material Declaration**:

Marketing Status

Active

Package

TO-247 long leads

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.