Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package

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  • This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

    Key Features

    • Very tight variation of on-resistance vs. temperature
    • Very high operating temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance

样片和购买

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SCTWA30N120 TO-247 long leads Tube
批量生产
22.5 1000 EAR99 CHINA 没有经销商,请联系我们的销售办事处

SCTWA30N120

封装

TO-247 long leads

包装类型

Tube

单价(US$)

22.5*

供货状态

批量生产

单价(US$)

22.5

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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技术文档

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      DS11470
      Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ= 150 °C), in an HiP247™ long leads package
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      DS11470

      Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ= 150 °C), in an HiP247™ long leads package

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产品型号 供货状态 封装 等级规格 符合RoHS级别 Material Declaration**
SCTWA30N120
批量生产
TO-247 long leads 工业 Ecopack2

SCTWA30N120

Package:

TO-247 long leads

Material Declaration**:

Marketing Status

批量生产

Package

TO-247 long leads

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.