产品概述
描述
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.-
所有功能
- Very fast and robust intrinsic body diode
- Low capacitances
- Source sensing pin for increased efficiency
- Very high operating junction temperature capability (TJ = 200 °C)
精选 视频
SiC can be applied to all types of energy handling
EDA符号、封装和3D模型
STMicroelectronics - SCTWA35N65G2V-4
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符号
封装
3D模型
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| SCTWA35N65G2V-4 | 1 distributors |
批量生产
|
EAR99 | NEC | Tube | HiP247-4 | - | - | CHINA | 10.3 / 100 | ||
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty
10.3 / 100