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SCTWA35N65G2V-4

批量生产
储存到myST

Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247-4 package

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产品概述

描述

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

  • 所有功能

    • Very fast and robust intrinsic body diode
    • Low capacitances
    • Source sensing pin for increased efficiency
    • Very high operating junction temperature capability (TJ = 200 °C)
    阅读更多 阅读较少信息

特别推荐

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Resource title
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产品规格 (1)

Resource title
Latest update
DS13583 Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package 1.0
03 Dec 2020
03 Dec 2020
DS13583 Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package 1.0

应用手册 (3)

Resource title
Latest update
AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗 1.0
23 Apr 2021
23 Apr 2021
AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗 1.0
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
15 Jul 2019
15 Jul 2019
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
AN3152 The right technology for solar converters 1.4
13 Sep 2018
13 Sep 2018
AN3152 The right technology for solar converters 1.4

技术文档 (2)

Resource title
Latest update
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
03 Apr 2020
03 Apr 2020
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
TN1340 Recommendation for die sintering with Ag finishing 1.0
22 Sep 2020
22 Sep 2020
TN1340 Recommendation for die sintering with Ag finishing 1.0

用户手册 (1)

Resource title
Latest update
UM1575 Spice model tutorial for Power MOSFETs 1.3
21 Oct 2016
21 Oct 2016
UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (5)

Resource title
Latest update
ST MOSFET Finder, the new app for Android and iOS 1.0
08 May 2020
08 May 2020
ST MOSFET Finder, the new app for Android and iOS 1.0
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
01 Feb 2021
01 Feb 2021
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
14 Oct 2020
14 Oct 2020
STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
SiC MOSFET, the real breakthrough in high-voltage switching 1.0
15 May 2020
15 May 2020
SiC MOSFET, the real breakthrough in high-voltage switching 1.0
SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
30 Apr 2021
30 Apr 2021
SiC MOSFETs: The real breakthrough in high-voltage switching 3.0

手册 (1)

Resource title
Latest update
Electric vehicle (EV) ecosystem 1.1
23 Mar 2020
23 Mar 2020
Electric vehicle (EV) ecosystem 1.1

会议文章 (5 of 8)

Resource title
Latest update
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
23 Jul 2018
23 Jul 2018
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis 1.0
29 Apr 2021
29 Apr 2021
Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis 1.0
Cost benefits of a SiC MOSFET-based high frequency converter 1.0
23 Mar 2020
23 Mar 2020
Cost benefits of a SiC MOSFET-based high frequency converter 1.0
Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
25 Jul 2018
25 Jul 2018
Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
25 Jul 2018
25 Jul 2018
SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
23 Jul 2018
23 Jul 2018
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
23 Jul 2018
23 Jul 2018
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
Wide bandgap materials: revolution in automotive power electronics 1.0
23 Mar 2020
23 Mar 2020
Wide bandgap materials: revolution in automotive power electronics 1.0
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EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCTWA35N65G2V-4

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

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质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
SCTWA35N65G2V-4
批量生产
HiP247-4 工业 Ecopack2

SCTWA35N65G2V-4

Package:

HiP247-4

Material Declaration**:

More Info

Marketing Status

批量生产

Package

HiP247-4

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度（ºC） Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
SCTWA35N65G2V-4 Available at 1 distributors

经销商的可用性SCTWA35N65G2V-4

代理商名称
地区 库存 最小订购量 第三方链接
ANGLIA Live EUROPE 100 1 马上订购

代理商库存报告日期: 2021-05-04

代理商名称

ANGLIA Live

库存

100

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2021-05-04

批量生产
EAR99 NEC Tube HiP247-4 - - CHINA

SCTWA35N65G2V-4

供货状态

批量生产

ECCN (US)

EAR99
更多信息

Budgetary Price (US$)*/Qty

经销商的可用性SCTWA35N65G2V-4

代理商名称
地区 库存 最小订购量 第三方链接
ANGLIA Live EUROPE 100 1 马上订购

代理商库存报告日期: 2021-05-04

代理商名称

ANGLIA Live

库存

100

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2021-05-04

ECCN (EU)

NEC

包装类型

Tube

封装

HiP247-4

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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