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SCTWA35N65G2V-4

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Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247-4 package

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描述

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2^nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

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Very fast and robust intrinsic body diode

Low capacitances

Source sensing pin for increased efficiency

Very high operating junction temperature capability (T_J = 200 °C)
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1200 V SiC MOSFETs

Industry's highest temperature rating of 200 °C

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	Resource title		Latest update

产品规格 (1)

	Resource title		Latest update
PDF	DS13583 Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package 1.0		03 Dec 2020	03 Dec 2020 DS13583 Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package 1.0

应用手册 (3)

	Resource title	Latest update
PDF	AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗 1.0	03 Apr 2020	03 Apr 2020 AN4671 如何调整碳化硅 MOSFET 驱动减少功率损耗 1.0
PDF	AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0	15 Jul 2019	15 Jul 2019 AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
PDF	AN3152 The right technology for solar converters 1.4	13 Sep 2018	13 Sep 2018 AN3152 The right technology for solar converters 1.4

技术文档 (2)

	Resource title		Latest update
PDF	TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2		03 Apr 2020	03 Apr 2020 TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
PDF	TN1340 Recommendation for die sintering with Ag finishing 1.0		22 Sep 2020	22 Sep 2020 TN1340 Recommendation for die sintering with Ag finishing 1.0

用户手册 (1)

	Resource title		Latest update
PDF	UM1575 Spice model tutorial for Power MOSFETs 1.3		21 Oct 2016	21 Oct 2016 UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (5)

	Resource title	Latest update
PDF	ST MOSFET Finder, the new app for Android and iOS 1.0	08 May 2020	08 May 2020 ST MOSFET Finder, the new app for Android and iOS 1.0
PDF	STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0	01 Feb 2021	01 Feb 2021 STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
PDF	STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0	14 Oct 2020	14 Oct 2020 STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
PDF	SiC MOSFET, the real breakthrough in high-voltage switching 1.0	15 May 2020	15 May 2020 SiC MOSFET, the real breakthrough in high-voltage switching 1.0
PDF	SiC MOSFETs: The real breakthrough in high-voltage switching 3.0	23 Mar 2020	23 Mar 2020 SiC MOSFETs: The real breakthrough in high-voltage switching 3.0

手册 (1)

	Resource title		Latest update
PDF	Electric vehicle (EV) ecosystem 1.1		23 Mar 2020	23 Mar 2020 Electric vehicle (EV) ecosystem 1.1

会议文章 (5 of 7)

	Resource title	Latest update
PDF	3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0	23 Jul 2018	23 Jul 2018 3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
PDF	Cost benefits of a SiC MOSFET-based high frequency converter 1.0	23 Mar 2020	23 Mar 2020 Cost benefits of a SiC MOSFET-based high frequency converter 1.0
PDF	Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0	25 Jul 2018	25 Jul 2018 Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
PDF	SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0	25 Jul 2018	25 Jul 2018 SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
PDF	Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0	23 Jul 2018	23 Jul 2018 Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
PDF	Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0	23 Jul 2018	23 Jul 2018 Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
PDF	Wide bandgap materials: revolution in automotive power electronics 1.0	23 Mar 2020	23 Mar 2020 Wide bandgap materials: revolution in automotive power electronics 1.0

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质量与可靠性

产品型号	Marketing Status	封装	等级规格	符合RoHS级别	材料声明**
SCTWA35N65G2V-4	批量生产	TO247-4	工业	Ecopack2

SCTWA35N65G2V-4

Package:

TO247-4

Material Declaration**:

More Info

Marketing Status

Package

TO247-4

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系销售支持。

样片和购买

	产品型号	从分销商订购	从ST订购	供货状态	ECCN (US)	ECCN (EU)	包装类型	封装	温度（ºC）		Country of Origin	Budgetary Price (US$)*/Qty
	产品型号	从分销商订购	从ST订购	供货状态	ECCN (US)	ECCN (EU)	包装类型	封装	最小值	最大值	Country of Origin	Budgetary Price (US$)*/Qty
	SCTWA35N65G2V-4	无法联系到经销商，请联系我们的销售办事处		批量生产	EAR99	NEC	Tube	TO247-4	-	-	CHINA

SCTWA35N65G2V-4

供货状态

批量生产

ECCN (US)

EAR99

更多信息

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tube

封装

TO247-4

Operating Temperature (°C)

(最小值)

(最大值)

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

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SCTWA35N65G2V-4

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