产品概述
描述
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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所有功能
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Low capacitances
- Source sensing pin for increased efficiency
- Very high operating junction temperature capability (TJ = 200 °C)
EDA符号、封装和3D模型
STMicroelectronics - SCTWA35N65G2V4AG
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封装
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