SCTWA35N65G2VAG

批量生产

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package

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样片和购买
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质量与可靠性
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  • This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

    主要特性

    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Low capacitance

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STMicroelectronics - SCTWA35N65G2VAG

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质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
SCTWA35N65G2VAG
批量生产
HIP247 long leads 汽车应用 Ecopack2

SCTWA35N65G2VAG

Package:

HIP247 long leads

Material Declaration**:

Marketing Status

批量生产

Package

HIP247 long leads

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
SCTWA35N65G2VAG 无法联系到经销商,请联系我们的销售办事处
批量生产
EAR99 NEC Tube HIP247 long leads - - CHINA

SCTWA35N65G2VAG

供货状态

批量生产

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tube

封装

HIP247 long leads

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商