Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package

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  • 该碳化硅功率MOSFET晶体管是利用宽禁带半导体材料的先进和创新特性生产出来的。因此,器件具有每区域无可比拟的导通状态电阻,以及卓越的开关性能,随温度变化极小。碳化硅(SiC)材料具有出色的热性能,使设计人员能够采用符合行业标准的设计,显著提高器件的散热能力。这些特性使器件非常适用于高效率和高功率密度应用。

    主要特性

    • 导通电阻随温度变化敏感温度
    • 非常高的额定工作结温 (TJ = 200 °C)
    • 稳定的超快速本体二极管
    • 低电容

样片和购买

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Package
Packing Type
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Budgetary Price (US$)*
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ECCN (US)
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SCTWA50N120 TO-247 long leads Tube
Active
25.5 1000 EAR99 CHINA No availability of distributors reported, please contact our sales office

SCTWA50N120

Package

TO-247 long leads

Packing Type

Tube

Unit Price (US$)

25.5*

Marketing Status

Active

Unit Price (US$)

25.5

Quantity

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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      DS11692
      Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package
      3.0
      709.9 KB
      PDF
      DS11692

      Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package

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型号 Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTWA50N120
Active
TO-247 long leads 工业 Ecopack2

SCTWA50N120

Package:

TO-247 long leads

Material Declaration**:

Marketing Status

Active

Package

TO-247 long leads

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.