SCTWA90N65G2V-4

批量生产
Design Win

Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

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产品概述

描述

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

  • 所有功能

    • High speed switching performance
    • Very high operating junction temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitances
    • Source sensing pin for increased efficiency

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EDA符号、封装和3D模型

STMicroelectronics - SCTWA90N65G2V-4

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符号

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封装

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3D模型

质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
SCTWA90N65G2V-4
批量生产
HiP247-4 工业 Ecopack2

SCTWA90N65G2V-4

Package:

HiP247-4

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

HiP247-4

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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产品型号
供货状态
Budgetary Price (US$)*/Qty
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包装类型
RoHS
Country of Origin
ECCN (US)
ECCN (EU)
SCTWA90N65G2V-4
Available at distributors

经销商的可用性 SCTWA90N65G2V-4

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SCTWA90N65G2V-4 批量生产

Budgetary Price (US$)*/Qty:
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包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

产品型号:

SCTWA90N65G2V-4

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商