产品概述
描述
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.-
所有功能
- High speed switching performance
- Very high operating junction temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitances
EDA符号、封装和3D模型
质量与可靠性
产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
---|---|---|---|---|---|
SCTWA90N65G2V | 批量生产 | HIP247 long leads | 工业 | Ecopack2 | |
SCTWA90N65G2V
Package:
HIP247 long leadsMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持。
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|
最小值 | 最大值 | |||||||||||
SCTWA90N65G2V | 1 distributors | 批量生产 | EAR99 | NEC | Tube | HIP247 long leads | - | - | CHINA | |