产品概述
描述
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.-
所有功能
- High voltage capability
- Low spread of dynamic parameters
- Very high switching speed
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EDA符号、封装和3D模型
STMicroelectronics - ST13003
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封装
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