N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in D2PAK package

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  • These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.

    主要特性

    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

样片和购买

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STB11NM60T4 D2PAK Tape And Reel
NRND
- - EAR99 CHINA 查看供货情况

Distributor availability ofSTB11NM60T4

代理商名称
地区 库存 最小订购量 Third party link
Farnell Element14 EUROPE 1000 1 Order Now

代理商库存报告日期: 2019-08-08

代理商名称

Farnell Element14

库存

1000

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-08-08

STB11NM60T4

封装

D2PAK

包装类型

Tape And Reel

Unit Price (US$)

*

Distributor availability ofSTB11NM60T4

代理商名称
地区 库存 最小订购量 Third party link
Farnell Element14 EUROPE 1000 1 Order Now

代理商库存报告日期: 2019-08-08

代理商名称

Farnell Element14

库存

1000

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-08-08

供货状态

NRND

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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      DS3653
      N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages
      7.0
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      N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages

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      AN4250
      Fishbone diagram for power factor correction
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      1.3
      880.04 KB
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      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
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      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
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      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

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      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
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      UM1575

      Spice model tutorial for Power MOSFETs

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STB11NM60T4
NRND
D2PAK 工业 Ecopack2

STB11NM60T4

Package:

D2PAK

Material Declaration**:

PDF XML

Marketing Status

NRND

Package

D2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.