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These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
主要特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STB11NM60T4
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STB11NM60T4 | 4 distributors | Buy Direct |
NRND
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EAR99 | NEC | Tape And Reel | D2PAK | -55 | 150 | CHINA | ||
