STB11NM60T4

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概述

工具与软件

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质量与可靠性

Sales Briefcase

eDesignSuite

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样片和购买

Partner products

快速链接

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.

主要特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
阅读更多阅读较少信息

样片和购买

产品型号

封装

包装类型

供货状态

预算价格(US$)

数量

ECCN (US)

Country of Origin

从分销商订购

从ST订购

STB11NM60T4

D2PAK

Tape And Reel

EAR99

CHINA

查看供货情况

Distributor availability ofSTB11NM60T4

代理商名称	地区	库存	最小订购量	Third party link
DIGIKEY	WORLDWIDE	1000	1	Order Now
Farnell Element14	EUROPE	732	1	Order Now

代理商库存报告日期: 2019-12-10

代理商名称

DIGIKEY

库存

1000

Min.Order

地区

WORLDWIDE Order Now

Farnell Element14

库存

732

Min.Order

地区

EUROPE Order Now

代理商库存报告日期: 2019-12-10

STB11NM60T4

封装

D2PAK

包装类型

Tape And Reel

More Info

单价(US$)

Distributor availability ofSTB11NM60T4

代理商名称	地区	库存	最小订购量	Third party link
DIGIKEY	WORLDWIDE	1000	1	Order Now
Farnell Element14	EUROPE	732	1	Order Now

代理商库存报告日期: 2019-12-10

代理商名称

DIGIKEY

库存

1000

Min.Order

地区

WORLDWIDE Order Now

Farnell Element14

库存

732

Min.Order

地区

EUROPE Order Now

代理商库存报告日期: 2019-12-10

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

开发工具硬件

软件开发工具
- Picture 产品型号
  
  制造商
  
  描述
  
  ST MOSFET Finder ST MOSFET product finder application for Android and iOS
  
  产品型号
  
  ST MOSFET Finder
  
  MOSFET product finder application for Android and iOS

Picture	产品型号	制造商	描述
	ST MOSFET Finder	ST	MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

产品规格
- 描述版本文档大小操作
  
  DS3653
  N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages 7.0
  624.3 KB
  PDF
  
  DS3653
  
  N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages
  
  PDF

	描述	版本	文档大小	操作
	DS3653 N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages	7.0	624.3 KB	PDF

应用手册

描述	版本	文档大小	操作
AN4250 Fishbone diagram for power factor correction	1.1	772.32 KB	PDF
AN2842 Paralleling of power MOSFETs in PFC topology	1.4	896.91 KB	PDF
AN2344 Power MOSFET avalanche characteristics and ratings	1.3	880.04 KB	PDF
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters	1.1	347.01 KB	PDF

AN4250

Fishbone diagram for power factor correction

PDF

AN2842

Paralleling of power MOSFETs in PFC topology

PDF

AN2344

Power MOSFET avalanche characteristics and ratings

PDF

AN4337

The avalanche issue: comparing the impacts of the IAR and EAS parameters

PDF

技术文档

	描述	版本	文档大小	操作
	TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products	1.0	657.71 KB	PDF

TN1156

Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

PDF

用户手册
- 描述版本文档大小操作
  
  UM1575
  Spice model tutorial for Power MOSFETs 1.3
  1.51 MB
  PDF
  
  UM1575
  
  Spice model tutorial for Power MOSFETs
  
  PDF

	描述	版本	文档大小	操作
	UM1575 Spice model tutorial for Power MOSFETs	1.3	1.51 MB	PDF

产品型号	供货状态	封装	等级规格	符合RoHS级别	Material Declaration**
STB11NM60T4	NRND	D2PAK	工业	Ecopack2	PDF XML

STB11NM60T4

Package:

D2PAK

Material Declaration**:

PDF XML

More Info

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.