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These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
主要特性
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
精选 视频
All tools & software
All resources
产品规格 (1)
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| 19 Sep 2016 |
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技术文档 (1)
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13 Nov 2016
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用户手册 (1)
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| 21 Oct 2016 |
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宣传册 (3)
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STB11NM80
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STB11NM80T4 |
批量生产
|
D2PAK | 工业 | Ecopack2 |
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STB11NM80T4
Package:
D2PAKMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STB11NM80T4 | 6 distributors | Buy Direct |
批量生产
|
EAR99 | NEC | Tape And Reel | D2PAK | -65 | 150 | CHINA | ||
