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These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
主要特性
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
样片和购买
| 产品型号 | 封装 | 包装类型 | 供货状态 | 预算价格(US$) | 数量 | ECCN (US) | Country of Origin | 从分销商订购 | 从ST订购 |
|---|---|---|---|---|---|---|---|---|---|
| STB11NM80T4 | D2PAK | Tape And Reel |
Active
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- | - | EAR99 | CHINA | 查看供货情况 |
STB11NM80T4
封装
D2PAK包装类型
Tape And ReelUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
精选 视频
开发工具硬件
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Picture 产品型号 制造商 描述 ST MOSFET Finder ST MOSFET product finder application for Android and iOS 产品型号MOSFET product finder application for Android and iOS
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| 产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STB11NM80T4 |
Active
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D2PAK | 工业 | Ecopack2 |
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STB11NM80T4
Package:
D2PAKMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
