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该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构,可降低通态电阻,同时降低内部电容和栅极电荷,从而使开关速度更快、能效更高。
主要特性
- 处于市场上最低 RDS(on) 的行列
- 出色的品质因数(FoM)
- 较低的 Crss/Ciss 比值使得其具有更强的抗EMI能力
- 坚固的抗雪崩能力
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
开发工具硬件
产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | Material Declaration** |
---|---|---|---|---|---|
STB130N6F7 | 批量生产 | D2PAK | 工业 | Ecopack2 | |
STB130N6F7
Package:
D2PAKMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.