These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
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