N-Channel 500V - 0.22Ohm - 20A - D2PAK FDmesh(TM) POWER MOSFET (with FAST DIODE)

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  • The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

    主要特性

    • High dv/dt and avalanche capabilities
    • Low input capacitance and gate charge
    • 100% avalanche tested
    • Tight process control and high manufacturing yields
    • Low gate input resistance

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
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STB20NM50FDT4 D2PAK Tape And Reel
NRND
- - EAR99 CHINA 查看供货情况

Distributor availability ofSTB20NM50FDT4

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 1000 1 Order Now
FUTURE WORLDWIDE 38000 1000 Order Now

代理商库存报告日期: 2019-09-16

代理商名称

DIGIKEY

库存

1000

Min.Order

1

地区

WORLDWIDE Order Now

FUTURE

库存

38000

Min.Order

1000

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-09-16

STB20NM50FDT4

封装

D2PAK

包装类型

Tape And Reel

Unit Price (US$)

*

Distributor availability ofSTB20NM50FDT4

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 1000 1 Order Now
FUTURE WORLDWIDE 38000 1000 Order Now

代理商库存报告日期: 2019-09-16

代理商名称

DIGIKEY

库存

1000

Min.Order

1

地区

WORLDWIDE Order Now

FUTURE

库存

38000

Min.Order

1000

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-09-16

供货状态

NRND

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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适合您的资源

开发工具硬件

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      MOSFET product finder application for Android and iOS

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技术文档

    • 描述 版本 文档大小 操作
      DS2314
      N-channel 500 V, 0.22 Ω, 20 A D²PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET (with fast diode)
      9.2
      396.5 KB
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      DS2314

      N-channel 500 V, 0.22 Ω, 20 A D²PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET (with fast diode)

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN1703
      Guidelines for using ST's MOSFET smd Packages
      1.3
      776.65 KB
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      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
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      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN1703

      Guidelines for using ST's MOSFET smd Packages

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STB20NM50FDT4 PSpice model (.lib) 1.0
      2.72 KB
      ZIP

      STB20NM50FDT4 PSpice model (.lib)

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STB20NM50FDT4
NRND
D2PAK 工业 Ecopack2

STB20NM50FDT4

Package:

D2PAK

Material Declaration**:

PDF XML

Marketing Status

NRND

Package

D2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.