Product overview
描述
These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.-
All features
- Extremely low gate charge and input capacitance
- Lower RDS(on)x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Extremely high dv/dt and avalanche capabilities
精选 视频
All tools & software
All resources
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产品规格 (1)
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应用手册 (5 of 7)
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技术文档 (1)
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用户手册 (1)
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宣传册 (4)
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手册 (1)
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EDA Symbols, Footprints and 3D Models
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硬件型号、CAD库及SVD (1)
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ZIP | 04 Dec 2014 |
04 Dec 2014
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样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STB24N60DM2 | 4 distributors | Free Sample Buy Direct |
批量生产
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EAR99 | NEC | Tape And Reel | D2PAK | - | - | CHINA |