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STB24N60DM2

批量生产
储存到myST

N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package

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样片和购买
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质量与可靠性
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样片和购买
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快速链接

  • These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

    主要特性

    • Extremely low gate charge and input capacitance
    • Lower RDS(on)x area vs previous generation
    • Low gate input resistance
    • 100% avalanche tested
    • Zener-protected
    • Extremely high dv/dt and avalanche capabilities
    阅读更多 阅读较少信息

样片和购买

产品型号
封装
包装类型
供货状态
ECCN (US)
Country of Origin
Approximate Price (US$)* / Qty
从ST订购
从分销商订购
STB24N60DM2 D2PAK Tape And Reel
批⁠量⁠生⁠产
EAR99 CHINA 获取样片 查看供货情况

...的经销商可用性STB24N60DM2

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 898 1 马上订购
MOUSER WORLDWIDE 2754 1 马上订购

代理商库存报告日期: 2020-04-03

代理商名称

DIGIKEY

库存

898

Min.Order

1

地区

WORLDWIDE 马上订购

MOUSER

库存

2754

Min.Order

1

地区

WORLDWIDE 马上订购

代理商库存报告日期: 2020-04-03

STB24N60DM2

封装

D2PAK

包装类型

Tape And Reel
更多信息

Approximate Price (US$)* / Qty

...的经销商可用性STB24N60DM2

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 898 1 马上订购
MOUSER WORLDWIDE 2754 1 马上订购

代理商库存报告日期: 2020-04-03

代理商名称

DIGIKEY

库存

898

Min.Order

1

地区

WORLDWIDE 马上订购

MOUSER

库存

2754

Min.Order

1

地区

WORLDWIDE 马上订购

代理商库存报告日期: 2020-04-03

供货状态

批⁠量⁠生⁠产

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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Fast recovery diode MOSFETs

Discover the MDmesh™ DM2 Series of fast recovery diode MOSFETs (400 V - 650 V), ideal for full-bridge phase-shifted Zero Voltage Switching (ZVS) topologies.

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    • 产品型号
      STPOWER MOSFET Finder

      STPOWER MOSFET finder mobile app for tablets and smartphones

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技术文档

    • 描述 版本 文档大小 操作
      		DS10027
      N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages       		3.0
      1.17 MB
      		PDF
      DS10027

      N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

      PDF
    • 描述 版本 文档大小 操作
      		AN4250
      Fishbone diagram for power factor correction       		1.1
      772.32 KB
      		PDF
      		AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection       		1.0
      1.4 MB
      		PDF
      		AN5427
      MDmesh DM6: the last ST super-junction technology with fast recovery diode       		1.0
      834.68 KB
      		PDF
      		AN2626
      MOSFET body diode recovery mechanism in a phase-shifted ZVS full bridge DC/DC converter       		1.4
      446.79 KB
      		PDF
      		AN2842
      Paralleling of power MOSFETs in PFC topology       		1.4
      896.91 KB
      		PDF
      		AN2344
      Power MOSFET avalanche characteristics and ratings       		1.3
      880.04 KB
      		PDF
      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
      347.01 KB
      		PDF
      AN4250

      Fishbone diagram for power factor correction

      PDF
      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      PDF
      AN5427

      MDmesh DM6: the last ST super-junction technology with fast recovery diode

      PDF
      AN2626

      MOSFET body diode recovery mechanism in a phase-shifted ZVS full bridge DC/DC converter

      PDF
      AN2842

      Paralleling of power MOSFETs in PFC topology

      PDF
      AN2344

      Power MOSFET avalanche characteristics and ratings

      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

      PDF
    • 描述 版本 文档大小 操作
      		TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products       		1.0
      657.71 KB
      		PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

      PDF
    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      		STB24N60DM2 PSpice model 1.0
      9.58 KB
      		ZIP

      STB24N60DM2 PSpice model

      ZIP

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      		300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      		PDF
      		400/650 V MDmesh DM2: STPOWER MOSFET series with fast-recovery body diode 1.0
      643.03 KB
      		PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      PDF

      400/650 V MDmesh DM2: STPOWER MOSFET series with fast-recovery body diode

      PDF
    • 描述 版本 文档大小 操作
      		Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      		PDF

      Electric vehicle (EV) ecosystem

      PDF
产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STB24N60DM2
批量生产
D2PAK Industrial Ecopack2

STB24N60DM2

Package:

D2PAK

Material Declaration**:

PDF XML
More Info

Marketing Status

批量生产

Package

D2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

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