STB24N60DM2

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产品概述

描述

These FDmesh II Plus™ low Q_gPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q_g. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

所有功能
Extremely low gate charge and input capacitance

Lower R_DS(on)x area vs previous generation

Low gate input resistance

100% avalanche tested

Zener-protected

Extremely high dv/dt and avalanche capabilities
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600 V and 650 V MDmesh M2 MOSFET series

Ideal for resonant-type power supplies

Watch the video (02:29)

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	产品型号	状态	描述	类型	供应商
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