产品概述
描述
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
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所有功能
- Extremely low gate charge
- Lower RDS(on)x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
特别推荐
EDA符号、封装和3D模型
全部资源
资源标题 | 版本 | Latest update |
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SPICE models (1)
资源标题 | 版本 | Latest update | ||
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ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
样片和购买
产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STB24N60M2 | distributors 无法联系到经销商,请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tape and Reel | D2PAK | - | - | CHINA | |