These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
- Worldwide best RDS(on)* area
- Higher VDSSrating
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
- High dv/dt capability
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