STB36NM60N

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产品概述

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This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

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Designed for automotive applications and AEC-Q101 qualified

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance
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600 V and 650 V MDmesh M2 MOSFET series

Ideal for resonant-type power supplies

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	产品型号	状态	描述	类型	供应商
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