产品概述
描述
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.-
所有功能
- Designed for automotive applications and AEC-Q101 qualified
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
精选 视频
Ideal for resonant-type power supplies
Ideal for hard-switching and high-current topologies
All tools & software
EDA符号、封装和3D模型
STMicroelectronics - STB36NM60N
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符号
封装
3D模型
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STB36NM60N | 1 distributors | Buy Direct |
批量生产
|
EAR99 | NEC | Tape And Reel | D2PAK | - | - | CHINA | ||
