STB4NK60Z-1

批量生产

N沟道600 V、1.7 Ohm典型值、4 A SuperMESH功率MOSFET,I2PAK封装

下载数据手册
概述
样片和购买
解决方案
资源
工具与软件
质量与可靠性
eDesignSuite
开始
Partner products
Sales Briefcase
  • These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

    主要特性

    • Extremely high dv/dt capability
    • 100% avalanche tested
    • Gate charge minimized
    • Zener-protected

移动应用

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS2818
      N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages
      9.0
      726.88 KB
      PDF
      DS2818

      N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STB4NK60Z-1 PSpice model (.lib) 1.0
      569 Byte(s)
      ZIP

      STB4NK60Z-1 PSpice model (.lib)

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      PDF
      400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
      203.54 KB
      PDF
      ST MOSFET Finder, the new app for Android and iOS 1.0
      305.22 KB
      PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode

      ST MOSFET Finder, the new app for Android and iOS

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
STB4NK60Z-1
批量生产
I2PAK 工业 Ecopack2

STB4NK60Z-1

Package:

I2PAK

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

I2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
封装
包装类型
供货状态
ECCN (US)
Country of Origin
Budgetary Price (US$)*/Qty
STB4NK60Z-1 没有经销商,请联系我们的销售办事处 立即购买 I2PAK Tube
批量生产
EAR99 CHINA

STB4NK60Z-1

封装

I2PAK

包装类型

Tube

Budgetary Price (US$)*/Qty

供货状态

批量生产

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商