Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package

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  • This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    主要特性

    • Designed for automotive applications and AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss

样片和购买

产品型号
封装
包装类型
供货状态
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ECCN (US)
Country of Origin
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STB80N4F6AG D2PAK Tape And Reel
Active
- - EAR99 CHINA 查看供货情况

Distributor availability ofSTB80N4F6AG

代理商名称
地区 库存 最小订购量 Third party link
MOUSER WORLDWIDE 2363 1 Order Now

代理商库存报告日期: 2019-09-19

代理商名称

MOUSER

库存

2363

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-09-19

Get sample

STB80N4F6AG

封装

D2PAK

包装类型

Tape And Reel

Unit Price (US$)

*

Distributor availability ofSTB80N4F6AG

代理商名称
地区 库存 最小订购量 Third party link
MOUSER WORLDWIDE 2363 1 Order Now

代理商库存报告日期: 2019-09-19

代理商名称

MOUSER

库存

2363

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-09-19

供货状态

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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技术文档

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      DS11103
      Automotive-grade N-Channel 40 V, 5.5 mΩ typ.,80 A STripFET™ F6 Power MOSFET in a D²PAK package
      2.0
      849.86 KB
      PDF
      DS11103

      Automotive-grade N-Channel 40 V, 5.5 mΩ typ.,80 A STripFET™ F6 Power MOSFET in a D²PAK package

    • 描述 版本 文档大小 操作
      AN3267
      Impact of power MOSFET VGS on buck converter performance
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      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      AN4191

      Power MOSFET: Rg impact on applications

      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
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      Spice model tutorial for Power MOSFETs

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      776.14 KB
      PDF
      STPOWER™ STripFET F7 MOSFET for Industrial applications 1.0
      1.15 MB
      PDF

      AEC-Q101 STripFET F7 MOSFETs for Automotive

      STPOWER™ STripFET F7 MOSFET for Industrial applications

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STB80N4F6AG
Active
D2PAK 汽车 Ecopack1

STB80N4F6AG

Package:

D2PAK

Material Declaration**:

PDF XML

Marketing Status

Active

Package

D2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.