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This Power MOSFET is the latest development of STMicroelectronics unique \"single feature size\" stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
主要特性
- Exceptional dv/dt capability
- Low threshold drive
- 100% avalanche tested
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开发工具硬件
产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | Material Declaration** |
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STB80NF03L-04T4 | 批量生产 | D2PAK | 汽车 | Ecopack1 | |
STB80NF03L-04T4
Package:
D2PAKMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.