Automotive-grade N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in a D2PAK package

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  • This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

    Key Features

    • AEC-Q101 qualified
    • 100% avalanche tested
    • Gate charge minimized
    • Very low intrinsic capacitance
    • Zener-protected

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STB9NK80Z D2PAK Tape And Reel
批量生产
- EAR99 CHINA 查看供货情况

Distributor availability ofSTB9NK80Z

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 552 1 Order Now
MOUSER WORLDWIDE 595 1 Order Now
Farnell Element14 EUROPE 630 1 Order Now

代理商库存报告日期: 2019-11-11

代理商名称

DIGIKEY

库存

552

Min.Order

1

地区

WORLDWIDE Order Now

MOUSER

库存

595

Min.Order

1

地区

WORLDWIDE Order Now

Farnell Element14

库存

630

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-11-11

立即购买

STB9NK80Z

封装

D2PAK

包装类型

Tape And Reel

单价(US$)

*

Distributor availability ofSTB9NK80Z

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 552 1 Order Now
MOUSER WORLDWIDE 595 1 Order Now
Farnell Element14 EUROPE 630 1 Order Now

代理商库存报告日期: 2019-11-11

代理商名称

DIGIKEY

库存

552

Min.Order

1

地区

WORLDWIDE Order Now

MOUSER

库存

595

Min.Order

1

地区

WORLDWIDE Order Now

Farnell Element14

库存

630

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-11-11

供货状态

批量生产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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开发工具硬件

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      MOSFET product finder application for Android and iOS

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技术文档

    • 描述 版本 文档大小 操作
      DS9606
      Automotive-grade N-channel 800 V, 1.5 Ω typ., 5.2 A SuperMESH Power MOSFET in a D²PAK package
      3.0
      775.95 KB
      PDF
      DS9606

      Automotive-grade N-channel 800 V, 1.5 Ω typ., 5.2 A SuperMESH Power MOSFET in a D²PAK package

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STB9NK80Z PSpice model 1.0
      10.46 KB
      ZIP

      STB9NK80Z PSpice model

产品型号 供货状态 封装 等级规格 符合RoHS级别 Material Declaration**
STB9NK80Z
批量生产
D2PAK 汽车 Ecopack1

STB9NK80Z

Package:

D2PAK

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

D2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.