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STB9NK80Z

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汽车级N沟道800 V、1.5 Ohm典型值、5.2 A SuperMESH功率MOSFET，D2PAK封装

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概述
Online design
样片和购买
解决方案
文件
CAD资源
工具与软件
质量与可靠性
开始
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Sales Briefcase

产品概述

描述

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

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All tools & software

    • 产品型号
      		状态
      		描述
      		类型
      		供应商

      STPOWER MOSFET Finder

      批量生产

      用于安卓和iOS的MOSFET产品查找应用

      		 查找器App ST
      STPOWER MOSFET Finder

      描述:

      用于安卓和iOS的MOSFET产品查找应用

全部资源

展开所有类别
Resource title
Latest update

产品规格 (1)

Resource title
Latest update
DS9606 Automotive-grade N-channel 800 V, 1.5 Ω typ., 5.2 A SuperMESH Power MOSFET in a D²PAK package 3.0
21 Oct 2019
21 Oct 2019
DS9606 Automotive-grade N-channel 800 V, 1.5 Ω typ., 5.2 A SuperMESH Power MOSFET in a D²PAK package 3.0

应用手册 (4)

Resource title
Latest update
AN4250 Fishbone diagram for power factor correction 1.1
13 Sep 2018
13 Sep 2018
AN4250 Fishbone diagram for power factor correction 1.1
AN2842 Paralleling of power MOSFETs in PFC topology 1.4
13 Sep 2018
13 Sep 2018
AN2842 Paralleling of power MOSFETs in PFC topology 1.4
AN2344 Power MOSFET avalanche characteristics and ratings 1.3
13 Sep 2018
13 Sep 2018
AN2344 Power MOSFET avalanche characteristics and ratings 1.3
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1
13 Sep 2018
13 Sep 2018
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1

技术文档 (1)

Resource title
Latest update
TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0
13 Nov 2016
13 Nov 2016
TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0

用户手册 (1)

Resource title
Latest update
UM1575 Spice model tutorial for Power MOSFETs 1.3
21 Oct 2016
21 Oct 2016
UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (3)

Resource title
Latest update
300-1200 V MDmesh 1.0
22 Feb 2021
22 Feb 2021
300-1200 V MDmesh 1.0
800-1050V MDmeshTM K5 ST’s first super-junction VHV MOSFET Series 1.0
08 Jan 2021
08 Jan 2021
800-1050V MDmeshTM K5 ST’s first super-junction VHV MOSFET Series 1.0
ST MOSFET Finder, the new app for Android and iOS 1.0
08 May 2020
08 May 2020
ST MOSFET Finder, the new app for Android and iOS 1.0

EDA符号、封装和3D模型

STMicroelectronics - STB9NK80Z

为您的应用下载所有EDA符号、封装和3D模型，加快您的设计速度。您可以从大量CAD格式中进行选择，以匹配您的设计工具链。

Symbols

符号

Footprints

封装

3D model

3D模型

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Resource title
Latest update

SPICE models (1)

Resource title
Latest update
STB9NK80Z PSpice model 1.0
27 Jul 2017
27 Jul 2017
STB9NK80Z PSpice model 1.0

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
STB9NK80Z
批量生产
D2PAK 汽车应用 Ecopack1

STB9NK80Z

Package:

D2PAK

Material Declaration**:

PDF XML
More Info

Marketing Status

批量生产

Package

D2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度（ºC） Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
STB9NK80Z 无法联系到经销商，请联系我们的销售办事处
批量生产
EAR99 NEC Tape And Reel D2PAK - - CHINA

STB9NK80Z

供货状态

批量生产

ECCN (US)

EAR99
更多信息

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tape And Reel

封装

D2PAK

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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