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These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
主要特性
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
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EDA Symbols, Footprints and 3D Models
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STD11N65M2 | 3 distributors | Free Sample Buy Direct |
批量生产
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EAR99 | NEC | Tape And Reel | DPAK | - | - | CHINA |