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该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构,可降低通态电阻,同时降低内部电容和栅极电荷,从而使开关速度更快、能效更高。
主要特性
- 处于市面上最低的 RDS(on) 行列
- 出色的品质因数(FoM)
- 较低的Crss/Ciss 比值使得其具有更强的抗EMI能力
- 坚固的抗雪崩能力
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
开发工具硬件
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