This product utilizes the 6th generation of design rules of STs proprietary STripFET technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
- RDS(on) * Qg industry benchmark
- High avalanche ruggedness
- Extremely low on-resistance RDS(on)
- Low gate drive power losses Application
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.