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STD15N50M2AG

批量生产
储存到myST

Automotive-grade N-channel 500 V, 0.336 Ohm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package

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快速链接

  • This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

    主要特性

    • Designed for automotive applications and AEC-Q101 qualified
    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected
    阅读更多 阅读较少信息

样片和购买

产品型号
封装
包装类型
供货状态
ECCN (US)
Country of Origin
Budgetary Price (US$)*/Qty
从ST订购
从分销商订购
STD15N50M2AG DPAK Tape And Reel
批⁠量⁠生⁠产
EAR99 CHINA 获取样片 查看供货情况

...的经销商可用性STD15N50M2AG

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 919 1 马上订购
MOUSER WORLDWIDE 673 1 马上订购
Farnell Element14 EUROPE 1780 1 马上订购

代理商库存报告日期: 2020-04-08

代理商名称

DIGIKEY

库存

919

Min.Order

1

地区

WORLDWIDE 马上订购

MOUSER

库存

673

Min.Order

1

地区

WORLDWIDE 马上订购

Farnell Element14

库存

1780

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2020-04-08

STD15N50M2AG

封装

DPAK

包装类型

Tape And Reel
更多信息

Budgetary Price (US$)*/Qty

...的经销商可用性STD15N50M2AG

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 919 1 马上订购
MOUSER WORLDWIDE 673 1 马上订购
Farnell Element14 EUROPE 1780 1 马上订购

代理商库存报告日期: 2020-04-08

代理商名称

DIGIKEY

库存

919

Min.Order

1

地区

WORLDWIDE 马上订购

MOUSER

库存

673

Min.Order

1

地区

WORLDWIDE 马上订购

Farnell Element14

库存

1780

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2020-04-08

供货状态

批⁠量⁠生⁠产

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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技术文档

    • 描述 版本 文档大小 操作
      		DS10975
      Automotive-grade N-channel 500 V, 0.336 Ω typ., 10 A MDmesh™ M2 Power MOSFET in a DPAK package       		2.0
      788.78 KB
      		PDF
      DS10975

      Automotive-grade N-channel 500 V, 0.336 Ω typ., 10 A MDmesh™ M2 Power MOSFET in a DPAK package

      PDF
    • 描述 版本 文档大小 操作
      		AN4250
      Fishbone diagram for power factor correction       		1.1
      772.32 KB
      		PDF
      		AN4829
      Fishbone diagrams for a forward converter       		1.1
      1.35 MB
      		PDF
      		AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection       		1.0
      1.4 MB
      		PDF
      		AN4742
      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology       		1.0
      1.29 MB
      		PDF
      		AN4406
      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies       		1.0
      652.78 KB
      		PDF
      		AN2842
      Paralleling of power MOSFETs in PFC topology       		1.4
      896.91 KB
      		PDF
      		AN2344
      Power MOSFET avalanche characteristics and ratings       		1.3
      880.04 KB
      		PDF
      		AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies       		1.0
      1.09 MB
      		PDF
      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
      347.01 KB
      		PDF
      AN4250

      Fishbone diagram for power factor correction

      PDF
      AN4829

      Fishbone diagrams for a forward converter

      PDF
      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      PDF
      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      PDF
      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      PDF
      AN2842

      Paralleling of power MOSFETs in PFC topology

      PDF
      AN2344

      Power MOSFET avalanche characteristics and ratings

      PDF
      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

      PDF
    • 描述 版本 文档大小 操作
      		TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products       		1.0
      657.71 KB
      		PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

      PDF
    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      		STD15N50M2AG PSpice model 1.0
      9.6 KB
      		ZIP

      STD15N50M2AG PSpice model

      ZIP

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      		300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      		PDF
      		500/650 V MDmesh™ M2 1.0
      1.03 MB
      		PDF
      		600/650 V MDmesh™ M2 1.0
      788.16 KB
      		PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      PDF

      500/650 V MDmesh™ M2

      PDF

      600/650 V MDmesh™ M2

      PDF
    • 描述 版本 文档大小 操作
      		Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      		PDF

      Electric vehicle (EV) ecosystem

      PDF
产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STD15N50M2AG
批量生产
DPAK Automotive Ecopack1

STD15N50M2AG

Package:

DPAK

Material Declaration**:

More Info

Marketing Status

批量生产

Package

DPAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

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