This Power MOSFET is the latest development of STMicroelectronis unique \"Single Feature Size™\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Typical RDS(on)=0.060Ω
- 100% Avalanche Tested
- Exceptional dv/dt Capability
- Application Oriented Characterization
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
Discover our medium-voltage N-channel power MOSFET portfolio, ranging from > 30 V to 350 V, for a broad range of industrial and automotive applications.