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This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
主要特性
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Logic level
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产品规格 (1)
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| 15 Oct 2015 |
15 Oct 2015
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应用手册 (5)
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用户手册 (1)
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| 21 Oct 2016 |
21 Oct 2016
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宣传册 (1)
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| 08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STD19N3LLH6AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STD19N3LLH6AG |
NRND
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DPAK | 汽车应用 | Ecopack1 |
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STD19N3LLH6AG
Package:
DPAKMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STD19N3LLH6AG | 4 distributors | Buy Direct |
NRND
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EAR99 | NEC | Tape And Reel | DPAK | - | - | CHINA | ||
