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This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
主要特性
- Designed for automotive applications and AEC-Q101 qualified
- Extremely low gate charge
- Exceptional dv/dt capability
- Low gate input resistance
- 100% avalanche tested
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
移动应用
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STD25NF20 | 8 distributors | 立即购买 |
批量生产
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EAR99 | NEC | Tape And Reel | DPAK | - | - | CHINA | ||
