产品概述
描述
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.-
所有功能
- Designed for automotive applications and AEC-Q101 qualified
- Extremely low gate charge
- Exceptional dv/dt capability
- Low gate input resistance
- 100% avalanche tested
精选 视频
All tools & software
All resources
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产品规格 (1)
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28 May 2015 | 28 May 2015 |
应用手册 (4)
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13 Sep 2018 | 13 Sep 2018 |
用户手册 (1)
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21 Oct 2016 | 21 Oct 2016 |
宣传册 (5)
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08 May 2020 | 08 May 2020 | |||
13 Jun 2019 | 13 Jun 2019 |
EDA Symbols, Footprints and 3D Models
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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STD25NF20 | 3 distributors | 批量生产 | EAR99 | NEC | Tape And Reel | DPAK | - | - | CHINA |
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty