Product overview
描述
This device is a P-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages-
All features
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate input resistance
精选 视频
All tools & software
All resources
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产品规格 (1)
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19 Sep 2016 |
19 Sep 2016
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应用手册 (2)
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25 Oct 2016 |
25 Oct 2016
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13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
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21 Oct 2016 |
21 Oct 2016
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宣传册 (1)
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08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
All resources
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硬件型号、CAD库及SVD (1)
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ZIP | 11 Dec 2020 |
11 Dec 2020
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样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STD26P3LLH6 | 4 distributors | Free Sample Buy Direct |
批量生产
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EAR99 | NEC | Tape And Reel | DPAK | - | - | CHINA | 0.68 / 1k |