STD3N65M6

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概述

工具与软件

资源

解决方案

质量与可靠性

Sales Briefcase

eDesignSuite

开始

样片和购买

Partner products

快速链接

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R_DS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

主要特性
- Reduced switching losses
- Lower R_DS(on) per area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
阅读更多阅读较少信息

样片和购买

产品型号	封装	包装类型	供货状态	ECCN (US)	Country of Origin	Approximate Price (US$)* / Qty	从ST订购	从分销商订购
STD3N65M6	DPAK	Tape And Reel	批⁠量⁠生⁠产	EAR99	CHINA	0.90		没有经销商，请联系我们的销售办事处

STD3N65M6

封装

DPAK

包装类型

Tape And Reel

更多信息

Approximate Price (US$)* / Qty

0.90

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

移动应用

Finders Apps
- 图片产品型号
  
  制造商
  
  描述
  
  STPOWER MOSFET Finder ST STPOWER MOSFET finder mobile app for tablets and smartphones
  
  产品型号
  
  STPOWER MOSFET Finder
  
  STPOWER MOSFET finder mobile app for tablets and smartphones

图片	产品型号	制造商	描述
	STPOWER MOSFET Finder	ST	STPOWER MOSFET finder mobile app for tablets and smartphones

00 选择要下载的文档

技术文档

产品规格
- 描述版本文档大小操作
  
  DS11612
  N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package 3.0
  625.64 KB
  PDF
  
  DS11612
  
  N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package
  
  PDF

	描述	版本	文档大小	操作
	DS11612 N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package	3.0	625.64 KB	PDF

应用手册

描述	版本	文档大小	操作
AN4250 Fishbone diagram for power factor correction	1.1	772.32 KB	PDF
AN2842 Paralleling of power MOSFETs in PFC topology	1.4	896.91 KB	PDF
AN2344 Power MOSFET avalanche characteristics and ratings	1.3	880.04 KB	PDF
AN5318 Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies	1.0	1.09 MB	PDF
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters	1.1	347.01 KB	PDF

AN4250

Fishbone diagram for power factor correction

PDF

AN2842

Paralleling of power MOSFETs in PFC topology

PDF

AN2344

Power MOSFET avalanche characteristics and ratings

PDF

AN5318

Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

PDF

AN4337

The avalanche issue: comparing the impacts of the IAR and EAS parameters

PDF

技术文档

	描述	版本	文档大小	操作
	TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products	1.0	657.71 KB	PDF

TN1156

Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

PDF

用户手册
- 描述版本文档大小操作
  
  UM1575
  Spice model tutorial for Power MOSFETs 1.3
  1.51 MB
  PDF
  
  UM1575
  
  Spice model tutorial for Power MOSFETs
  
  PDF

	描述	版本	文档大小	操作
	UM1575 Spice model tutorial for Power MOSFETs	1.3	1.51 MB	PDF

硬件型号、CAD库及SVD

	描述	版本	文档大小	操作
	std3n65m6 Pspice Model	1.0	10.29 KB	ZIP

出版刊物和宣传资料

宣传册

	描述	版本	文档大小	操作
	300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions	1.0	568.16 KB	PDF
	600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency	1.0	760.45 KB	PDF