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This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
主要特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
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开发工具硬件
产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | Material Declaration** |
---|---|---|---|---|---|
STD3NM60N | 批量生产 | DPAK | 工业 | Ecopack2 | |
STD3NM60N
Package:
DPAKMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.