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This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
主要特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
样片和购买
| 产品型号 | 封装 | 包装类型 | 供货状态 | 预算价格(US$) | 数量 | ECCN (US) | Country of Origin | 从分销商订购 | 从ST订购 |
|---|---|---|---|---|---|---|---|---|---|
| STD3NM60N | DPAK | Tape And Reel |
Active
|
- | - | EAR99 | CHINA | 查看供货情况 |
STD3NM60N
封装
DPAK包装类型
Tape And ReelUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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开发工具硬件
| 产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STD3NM60N |
Active
|
DPAK | 工业 | Ecopack2 |
|
STD3NM60N
Package:
DPAKMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
